Product Information

BFR505,215

BFR505,215 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 15V 9GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2141 ea
Line Total: USD 0.21

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 0.2141
5 : USD 0.213
50 : USD 0.2082
250 : USD 0.1977
1000 : USD 0.1895
2500 : USD 0.1872

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

BFR505 NPN 9 GHz wideband transistor Rev. 4 7 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the RF front end in wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV). The transistor is encapsulated in a plastic SOT23 envelope. 1.2 Features and benefits High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 20 V CBO voltage V collector-emitter R = 0 -- 15 V CES BE voltage DC collector -- 18 mA I C current 1 P total power up to T = 135 C -- 150mW tot s dissipation h DC current gain I = 5 mA V = 6 V 60 120 250 FE C CE C feedback I = i = 0 A V = 6 V f = 1 MHz - 0.3 - pF re C c CB capacitance transition frequency I = 5 mA V = 6 V f = 1 GHz - 9 - GHz f T C CE maximum unilateral I = 5 mA V = 6 V -17 -dB G UM C CE power gain T = 25 C f = 900 MHz amb I = 5 mA V = 6 V -10 -dB C CE T = 25 C f = 2 GHz amb 2 S insertion power I = 5 mA V = 6 V 13 14 - dB 21 C CE gain T = 25 C f = 900 MHz amb SOT23BFR505 NXP Semiconductors NPN 9 GHz wideband transistor Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit F noise figure = I = 1.25 mA V = 6 V -1.2 1.7 dB s opt C CE T = 25 C f = 900 MHz amb = I = 5 mA V = 6 V -1.6 2.1 dB s opt C CE T = 25 C f = 900 MHz amb = I = 1.25 mA V = 6 V -1.9 -dB s opt C CE T = 25 C f = 2 GHz amb 1 T is the temperature at the soldering point of the collector tab. s 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol 1base 3 3 2emitter 3 collector 1 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFR505 - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking table 1 Type number Marking code BFR505 31* 1 * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. BFR505 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 7 September 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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