MCP87090 High-Speed N-Channel Power MOSFET Features: Description: Low Drain-to-Source On Resistance (R ) DS(ON) The MCP87090 is an N-Channel power MOSFET in a Low Total Gate Charge (Q ) and Gate-to-Drain G popular PDFN 5 mm x 6 mm package, as well as a Charge (Q ) GD PDFN 3.3mmx3.3mm package. Advanced Low Series Gate Resistance (R ) G packaging and silicon processing technologies allow Capable of Short Dead-Time Operation the MCP87090 to achieve a low Q for a given R G DS(ON) value, resulting in a low Figure of Merit (FOM). RoHS Compliant Combined with low R , the low FOM of the MCP87090 G device allows high efficiency power conversion with Applications: reduced switching and conduction losses. Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 5 x 6 PDFN 3.3 x 3.3 SD1 8 S D 2 7 S 3 6 D G45 D Product Summary Table: Unless otherwise indicated, T = +25C A Parameters Sym.Min.Typ.Max.Units Conditions Operating Characteristics Drain-to-Source Breakdown Voltage BV 25 V V = 0V, I = 250 A DSS GS D Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 10 12 m V = 4.5V, I = 17A DS(ON) GS D 8.5 10.5 m V = 10V, I = 17A GS D Total Gate Charge Q 7.5 10 nC V = 12.5V, I = 17A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.8 nC V = 12.5V, I = 17A GD DS D Series Gate Resistance R 1.8 G Thermal Characteristics Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R 70 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R 3.3 C/W Note 2 JC Thermal Resistance Junction-to-X, 8L 5x6-PDFN R 55 C/W Note 1 JX Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R 3.2 C/W Note 2 JC Note 1: R is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1 x 1 mounting pad of 2 oz. copper. JX This characteristic is dependent on users board design. 2: R is determined using JEDEC 51-14 Method. This characteristic is determined by design. JC 2013 Microchip Technology Inc. DS20002332B-page 1MCP87090 E Avalanche Energy .................................... 84.5 mJ 1.0 ELECTRICAL AS CHARACTERISTICS I =13A, L= 1mH, R =25 D G Notice: Stresses above those listed under Maximum Absolute Maximum Ratings Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of V .......................................................................+25V DS the device at those or any other conditions above those V ........................................................... +10.0V / -8V indicated in the operational sections of this GS specification is not intended. Exposure to maximum I Continuous .............................................................. D, rating conditions for extended periods may affect 8L 5x6-PDFN ............................. 51A, T = +25C C device reliability. 8L 3.3x3.3-PDFN ....................... 50A, T = +25C C P ................................................................................. D 8L 5x6-PDFN ........................... 2.2W, T = +25C A 8L 3.3x3.3-PDFN ..................... 1.8W, T = +25C A T , T ..............................................-55C to +150C J STG DC ELECTRICAL CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T = +25C. A Parameters Sym.Min.Typ.Max.Units Conditions Static Characteristics Drain-to-Source BV 25 V V = 0V, I = 250 A DSS GS D Breakdown Voltage Drain-to-Source Leakage Current I 1 A V = 0V, V = 20V DSS GS DS Gate-to-Source Leakage Current I 100 nA V = 0V, V = 10V/-8V GSS DS GS Gate-to-Source Threshold Voltage V 1.1 1.35 1.7 V V = V , I = 250 A GS(TH) DS GS D Drain-to-Source On Resistance R 10 12 m V = 4.5V, I = 17A DS(ON) GS D 8.5 10.5 m V = 10V, I = 17A GS D Transconductance g 62 S V = 12.5V, I = 17A fs DS D Dynamic Characteristics Input Capacitance C 580 pF V = 0V, V = 12.5V, f = 1 MHz ISS GS DS Output Capacitance C 265 pF V = 0V, V = 12.5V, f = 1 MHz OSS GS DS Reverse Transfer Capacitance C 70 pF V = 0V, V = 12.5V, f = 1 MHz RSS GS DS Total Gate Charge Q 7.5 10 nC V = 12.5V, I = 17A, V = 4.5V G DS D GS Gate-to-Drain Charge Q 2.8 nC V = 12.5V, I = 17A GD DS D Gate-to-Source Charge Q 1.2 nC V = 12.5V, I = 17A GS DS D Gate Charge at V Q 0.8 nC V = 12.5V, I = 17A GS(TH) G(TH) DS D Output Charge Q 5 nCV = 12.5V, V = 0 OSS DS GS Turn-On Delay Time t 2.5 ns V = 12.5V, V = 4.5V, d(on) DS GS I = 17A, R = 2 D G Rise Time t 9.3 ns V = 12.5V, V = 4.5V, r DS GS I = 17A, R = 2 D G Turn-Off Delay Time t 5.3 ns V = 12.5V, V = 4.5V, d(off) DS GS I = 17A, R = 2 D G Fall Time t 2.9 ns V = 12.5V, V = 4.5V, f DS GS I = 17A, R = 2 D G Series Gate Resistance R 1.8 G Diode Characteristics Diode Forward Voltage V 0.8 1 V I = 17A, V = 0V FD S GS Reverse Recovery Charge Q 11 nC I = 17A, di/dt = 300 A/s RR S Reverse Recovery Time t 11.5 nS I = 17A, di/dt = 300 A/s rr S DS20002332B-page 2 2013 Microchip Technology Inc.