BFS17S NPN Silicon RF Transistor For broadband amplifiers up to 1 GHz at 4 collector currents from 1 mA to 20 mA 5 3 6 2 1 BFS17S: For orientation in reel see package information below Pb-free (RoHS compliant) package ESD (Electrostatic discharge) sensitive device, observe handling precaution Type Marking Pin Configuration Package BFS17S MCs 1=B1 2=E1 3=C2 4=B2 5=E2 6=C1 SOT363 Maximum Ratings at T = 25 C, unless otherwise specified A Parameter Symbol Value Unit 15 V Collector-emitter voltage V CEO 25 Collector-base voltage V CBO 2.5 Emitter-base voltage V EBO 25 mA Collector current I C 50 Peak collector current, f = 10 MHz I CM 1) 280 mW Total power dissipation P tot T 93 C S 150 C Junction temperature T J Ambient temperature T -65 ... 150 A Storage temperature T -65 ... 150 Stg Thermal Resistance Parameter Symbol Value Unit 2) K/W Junction - soldering point R 240 thJS 1 T is measured on the collector lead at the soldering point to the pcb S 2 For calculation of R please refer to Application Note AN077 (Thermal Resistance Calculation) thJA 1 2011-07-20BFS17S Electrical Characteristics at T = 25C, unless otherwise specified A Parameter Symbol Values Unit min. typ. max. DC Characteristics 15 - - V Collector-emitter breakdown voltage V (BR)CEO I = 1 mA, I = 0 C B A Collector-base cutoff current I CBO V = 10 V, I = 0 - - 0.05 CB E V = 25 V, I = 0 - - 10 CB E - - 100 Emitter-base cutoff current I EBO V = 2.5 V, I = 0 EB C - DC current gain h FE I = 2 mA, V = 1 V, pulse measured 40 - 150 C CE I = 25 mA, V = 1 V, pulse measured 20 70 - C CE Collector-emitter saturation voltage V - 0.1 0.4 V CEsat I = 10 mA, I = 1 mA C B 2 2011-07-20