DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max 100% avalanche rated part D V R max (BR)DSS DS(on) T = +25C A Low R - minimizes conduction losses DS(on) Low Q - minimizes switching losses 16m V = 10V 9.8A g GS 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 22m V = 4.5V 8.4A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description PPAP Capable (Note 4) This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Mechanical Data ideal for high efficiency power management applications. Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper DC-DC Converters e3 Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (approximate) Top View D D 1 2 SO-8 G G 1 2 S S 1 2 Top View Pin Configuration N-Channel MOSFET N-Channel MOSFET Internal Schematic Ordering Information (Notes 4 & 5) Part Number Compliance Case Packaging DMG4800LSD-13 Standard SO-8 2,500 / Tape & Reel DMG4800LSDQ-13 Automotive SO-8 2,500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG4800LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 25 V GSS Steady T = +25C 7.5 A I A D State 6.0 T = +70C A Continuous Drain Current (Note 7) V = 10V GS T = +25C 9.8 A t<10s A I D 7.7 T = +70C A Steady T = +25C 6.4 A I A D State 5.0 T = +70C A Continuous Drain Current (Note 7) V = 4.5V GS T = +25C 8.4 A t<10s A I D 6.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) I 2 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 42 A DM Avalanche Current (Notes 8 & 9) L = 0.1mH I 17 A AR Repetitive Avalanche Energy (Notes 8 & 9) L = 0.1mH E 14 mJ AR Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 1.17 W P D Steady State 107 Thermal Resistance, Junction to Ambient (Note 6) R C/W JA t<10s 61 Total Power Dissipation (Note 7) 1.5 W P D Steady State 83 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 49 C/W Thermal Resistance, Junction to Case 14.5 R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 30V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage 0.8 1.6 V V V = V , I = 250 A GS(th) DS GS D 12 16 V = 10V, I = 9A GS D Static Drain-Source On-Resistance R m DS(on) 16 22 V = 4.5V, I = 7A GS D Forward Transfer Admittance 8 S Y V = 10V, I = 9A fs DS D Diode Forward Voltage V 0.72 0.94 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 798 pF iss V = 10V, V = 0V, DS GS Output Capacitance C 128 pF oss f = 1.0MHz Reverse Transfer Capacitance C 122 pF rss Gate Resistance R 1.37 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 8.56 nC g V = 5V, V = 15V, GS DS Gate-Source Charge Q 1.8 nC gs I = 9A D Gate-Drain Charge 2.5 nC Q gd Turn-On Delay Time 5.03 ns t D(on) Turn-On Rise Time 4.50 ns t V = 15V, V = 10V, r DD GEN Turn-Off Delay Time t 26.33 ns R = 15 , R = 6 , I = 1A D(off) L G D Turn-Off Fall Time t 8.55 ns f Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E rating are based on low frequency and duty cycles to keep T = +25C. AR AR J 9. Applicable to products manufactured with Data Code 1146 (Nov, 2011) and newer. 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 6 July 2014 DMG4800LSD Diodes Incorporated www.diodes.com Document number: DS31858 Rev. 7 - 2