AO3415 20V P-Channel MOSFET General Description Product Summary V -20V The AO3415 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate DS(ON) I (at V =-4.5V) -4A D GS voltages as low as 1.8V. This device is suitable for use as R (at V = -4.5V) < 41m DS(ON) GS a load switch applications. R (at V = -2.5V) < 53m DS(ON) GS R (at V = -1.8V) < 65m DS(ON) GS ESD protected SOT23 D Top View Bottom View D G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV --2200 VV DDSS Gate-Source Voltage V 8 V GS T =25C -4 A Continuous Drain I D Current T =70C -3.5 A A C Pulsed Drain Current I -30 DM T =25C 1.5 A P W D B Power Dissipation T =70C 1 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 65 80 C/W R A D JA Maximum Junction-to-Ambient Steady-State 85 100 C/W Steady-State Maximum Junction-to-Lead R 43 52 C/W JL Rev 7: Sep 2011 www.aosmd.com Page 1 of 5 AO3415 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -20 V D GS DSS V =-20V, V =0V -1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C -5 J V =0V, V = 8V I Gate-Body leakage current 10 A GSS DS GS V V =V , I =-250 Gate Threshold Voltage -0.3 -0.57 -0.9 V GS(th) DS GS D I On state drain current V =-4.5V, V =-5V -30 A GS DS D(ON) V =-4.5V, I =-4A 34 41 GS D m T =125C 49 59 J R Static Drain-Source On-Resistance V =-2.5V, I =-4A 42 53 m DS(ON) GS D V =-1.8V, I =-2A 52 65 m GS D V =-1.5V, I =-1A 61 m GS D g Forward Transconductance V =-5V, I =-4A 20 S FS DS D V Diode Forward Voltage I =-1A,V =0V -0.64 -1 V SD S GS I Maximum Body-Diode Continuous Current -2 A S DYNAMIC PARAMETERS C Input Capacitance 600 751 905 pF iss C Output Capacitance V =0V, V =-10V, f=1MHz 80 115 150 pF GS DS oss C Reverse Transfer Capacitance 48 80 115 pF rss V =0V, V =0V, f=1MHz R Gate resistance 6 13 20 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 7.4 9.3 11 nC g Q Gate Source Charge V =-4.5V, V =-10V, I =-4A 0.8 1 1.2 nC GS DS D gs Q Gate Drain Charge 1.3 2.2 3.1 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 1133 nnss D(on) t Turn-On Rise Time V =-4.5V, V =-10V, R =2.5, 9 ns r GS DS L R =3 t Turn-Off DelayTime 19 ns GEN D(off) t Turn-Off Fall Time 29 ns f t I =-4A, dI/dt=500A/s 20 26 32 rr Body Diode Reverse Recovery Time F ns Q I =-4A, dI/dt=500A/s 40 51 62 nC rr Body Diode Reverse Recovery Charge F 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedance from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: Sep 2011 www.aosmd.com Page 2 of 5