Product Information

VS-40CTQ150-1-M3

VS-40CTQ150-1-M3 electronic component of Vishay

Datasheet
Schottky Diodes & Rectifiers Schottky - TO-262-e3

Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2944 ea
Line Total: USD 3.29

7660 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7651 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1
1 : USD 2.2425
10 : USD 1.909
100 : USD 1.564
500 : USD 1.357
1000 : USD 1.1615
2000 : USD 1.1615
5000 : USD 1.1327
10000 : USD 1.1132
25000 : USD 1.0856

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Voltage - Dc Reverse Vr Max
Current - Average Rectified Io
Voltage - Forward Vf Max @ If
LoadingGif

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VS-40CTQ150S-M3, VS-40CTQ150-1-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 x 20 A FEATURES Very low forward voltage drop 175 C T operation J Center tap TO-220 package 2 1 High frequency operation 1 High purity, high temperature epoxy 3 2 encapsulation for enhanced mechanical strength and 2 D PAK (TO-263AB) 3 TO-262AA moisture resistance Base Base Guard ring for enhanced ruggedness and long term common common reliability cathode cathode 2 2 Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C Designed and qualified according to JEDEC -JESD 47 Material categorization: for definitions of compliance 2 2 please see www.vishay.com/doc 99912 1 1 Common 3 3 Common Anode cathode Anode Anode cathode Anode DESCRIPTION VS-40CTQ150S-M3 VS-40CTQ150-1-M3 The VS-40CTQ... center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate PRIMARY CHARACTERISTICS leakage. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical I 2 x 20 A F(AV) applications are in switching power supplies, converters, V 150 V R freewheeling diodes, and reverse battery protection. V at I 0.71 V F F I 15 mA at 125 C RM T max. 175 C J E 1 mJ AS 2 Package D PAK (TO-263AB), TO-262AA Circuit configuration Common cathode MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS I Rectangular waveform 40 A F(AV) V 150 V RRM I t = 5 s sine 1500 A FSM p V 20 A , T = 125 C (per leg) 0.71 V F pk J T -55 to +175 C J VOLTAGE RATINGS VS-40CTQ150S-M3 PARAMETER SYMBOL UNITS VS-40CTQ150-1-M3 Maximum DC reverse voltage V R 150 V Maximum working peak reverse voltage V RWM Revision: 27-Oct-17 Document Number: 95732 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 VS-40CTQ150S-M3, VS-40CTQ150-1-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS per leg 20 Maximum average forward I 50 % duty cycle at T = 140 C, rectangular waveform F(AV) C current, see fig. 5 per device 40 5 s sine or 3 s rect. pulse Following any rated 1500 A Maximum peak one cycle non-repetitive load condition and I FSM 10 ms sine or 6 ms rect. surge current per leg, see fig. 7 with rated V RRM 250 pulse applied Non-repetitive avalanche energy per leg E T = 25 C, I = 1.5 A, L = 0.9 mH 1.0 mJ AS J AS Current decaying linearly to zero in 1 s Repetitive avalanche current per leg I Frequency limited by T maximum V = 1.5 x V 1.5 A AR J A R typical ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 20 A 0.93 T = 25 C J 40 A 1.16 Maximum forward voltage drop per leg (1) V V FM See fig. 1 20 A 0.71 T = 125 C J 40 A 0.85 T = 25 C 50 A J Maximum reverse leakage current per leg (1) I V = Rated V RM R R See fig. 2 T = 125 C 15 mA J Maximum junction capacitance per leg C V = 5 V (test signal range 100 kHz to 1 MHz), 25 C 450 pF T R DC Typical series inductance per leg L Measured lead to lead 5 mm from package body 8.0 nH S Maximum voltage rate of change dV/dt Rated V 10 000 V/s R Note (1) Pulse width < 300 s, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Maximum junction and storage temperature range T , T -55 to +175 C J Stg Maximum thermal resistance, DC operation 1.5 junction to case per leg See fig. 4 R thJC Maximum thermal resistance, C/W DC operation 0.75 junction to case per package Typical thermal resistance, case to heatsink R Mounting surface, smooth and greased 0.5 thCS 2g Approximate weight 0.07 oz. minimum 6 (5) kgf cm Mounting torque Non-lubricated threads (lbf in) maximum 12 (10) 2 Case style D PAK (TO-263AB) 40CTQ150S Marking device Case style TO-262AA 40CTQ150-1 Revision: 27-Oct-17 Document Number: 95732 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
BC
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BEYSCHLAG
DALE
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