Product Information

MMBTA44G-AE3-R

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Datasheet
Transistors (NPN/PNP) NPN 300mA 400V SOT-23 (SOT-23-3) RoHS
Manufacturer: Unisonic



Price (Ex GST)

From 0.1038

290 - Global Stock
Ships to you between
Fri. 01 Oct to Wed. 06 Oct
MOQ: 10 Multiples:10
Pack Size :   10
Availability Price Quantity
290 - Global Stock


Ships to you between
Fri. 01 Oct to Wed. 06 Oct

MOQ : 10
Multiples : 10

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MMBTA44G-AE3-R
Unisonic

10 : $ 0.1543
100 : $ 0.1173
300 : $ 0.1105
1000 : $ 0.1038

     
Manufacturer
Unisonic
Product Category
Bipolar Transistors - BJT
Category
Bipolar Transistors - Bjt
Rohs
Y
Package
SOT - 23 (SOT - 23 - 3)
Brand Category
Unisonic
Transistor Type
Npn
Current - Collector Ic Max
300 mA
Voltage - Collector Emitter Breakdown Max
400 V
Power - Max
350 mW
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UNISONIC TECHNOLOGIES CO., LTD MMBTA44/45 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTORS FEATURES MMBTA44 3 *Collector-Emitter voltage: VCEO=400V (UTC ) MMBTA45 VCEO=350V (UTC ) *Collector current up to 300mA 1 MMBTA94/93 *Complement to UTC 2 *Power Dissipation: PD(max)=350mW SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBTA44G-AE3-R SOT-23 E B C Tape Reel MMBTA45G-AE3-R SOT-23 E B C Tape Reel Note: Pin Assignment: E: Emitter B: Base C: Collector MARKINGS MMBTA45 MMBTA44 www.unisonic.com.tw 1 of 4 Copyright 2010 Unisonic Technologies Co., Ltd. QW-R206-007.F MMBTA44/45 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT MMBTA44 500 V Collector-Base Voltage VCBO MMBTA45 400 V MMBTA44 400 V Collector-Emitter Voltage V CEO MMBTA45 350 V Emitter-Base Voltage V 6 V EBO Collector Current I 300 mA C T =25C 350 mW A Power Dissipation P D TC=25C 1.5 W Junction Temperature T +150 C J Storage Temperature T -40 ~ +150 C STG Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T =25C, unless otherwise specified) J PARAMETER SYMBOLTEST CONDITIONS MIN TYP MAXUNIT MMBTA44 500 V Collector-Base Breakdown BV I =100A, I =0 CBO C B Voltage MMBTA45 400 V Collector-Emitter Breakdown MMBTA44 400 V BV I =1mA, I =0 CEO C B Voltage MMBTA45 350 V Emitter-Base Breakdown Voltage BV I =100A, I =0 6 V EBO E C I =1mA, I=0.1mA 0.4 V C B Collector-Emitter Saturation Voltage V I =10mA, I=1mA 0.5 V CE(SAT) C B IC =50mA, IB=5mA 0.75V Base-Emitter Saturation Voltage V I 10mA, I=1mA 0.75V BE(SAT) C B MMBTA44 V =400V, I=0 0.1 A CB E Collector Cut-off Current ICBO MMBTA45 V =320V, I=0 0.1 A CB E MMBTA44 VCE =400V, IB=0 0.5 A Collector Cut-off Current I CES MMBTA45 V =320V, I=0 0.5 A CE B Emitter Cut-off Current I V =4V, I =0 0.1 A EBO EB C h V =10V, I =1mA 40 FE1 CE C VCE =10V, IC =10mA 50 240 h FE2 DC Current Gain (Note) V =10V, I =50mA 45 h CE C FE3 V =10V, I =100mA 40 h CE C FE4 V =20V, I =10mA CE C Current Gain Bandwidth Product f 50 MHz T f=100MHz Output Capacitance Cob VCB=20V, IE =0, f=1MHz 7 pF Note: Pulse test: P <300s, Duty Cycle<2% W UNISONIC TECHNOLOGIES CO., LTD 2 of 4 www.unisonic.com.tw QW-R206-007.F

Tariff Concession Code
Tariff Desc

Free
8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Unisonic may also be referenced as

Unisonic Tech
UTC(Unisonic Tech)