Product Information

OPB621

OPB621 electronic component of TT Electronics

Datasheet
Optical Switches, Specialized Photodiode version OPB620

Manufacturer: TT Electronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.2144 ea
Line Total: USD 3.21

628 - Global Stock
Ships to you between
Mon. 06 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
548 - Global Stock


Ships to you between Mon. 06 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

OPB621
TT Electronics

1 : USD 2.162
100 : USD 2.093
300 : USD 2.0125
500 : USD 1.9895
10000 : USD 1.978

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Sensing Method
Mounting Style
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Output Device
Sensing Distance
Wavelength
Brand
Forward Current
Power Dissipation
Reverse Voltage
Factory Pack Quantity :
Height
Output Type
Width
Number Of Channels
Cnhts
Hts Code
If - Forward Current
Ir - Reverse Current
Maximum Collector Current
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
Vf - Forward Voltage
Vr - Reverse Voltage
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Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Features: Non-contact switching Printed circuit board mounting Enhanced signal to noise ratio PIN photodiode sensor for high speed (OPB611, OPB621) Lead centers: 0.275 (OPB61 ) / 0.320 (OPB62 ) Gap: 0.150 (OPB61 ) / 0.190 (OPB62 ) Description: The OPB610 and OPB620 slotted optical switches consist of an infrared emitting diode and an NPN silicon phototransistor with an enhanced low current roll-off to improve contrast ratio and immunity to background irradiance. The OPB611, OPB621 slotted optical switch consists of an infrared emitting diode and a PIN photodiode with a polysulfone housing that is opaque to visible light, but transmissive to infrared. The low t /t of the PIN photodiode r f is ideal for high-speed operation. The sensitivity to ambient radiation is minimized. Custom electrical, wire and cabling and connectors are available. Contact your local representative or OPTEK for more information. Ordering Information Applications: Part LED Peak Slot Width / Aperture Lead Length / Non-contact reflective object sensor Number Wavelength Sensor Depth Emitter / Sensor Spacing Assembly line automation OPB610 Rbe Transistor 0.150 / 0.240 0.100 / 0.275 Machine automation OPB611 Diode Machine safety 890 nm 0.06 / 0.06 OPB620 Rbe Transistor End of travel sensor 0.190 / 0.285 0.100 / 0.320 Door sensor OPB621 Diode OPB610, OPB611 OPB620, OPB621 2 3 1 4 OPB610, OPB620 2 3 1 4 OPB611, OPB621 Pin LED Pin Transistor / Diode MILLIMETERS DIMENSIONS ARE IN: 1 Anode 4 Emitter / Anode INCHES 2 Cathode 3 Collector / Cathode OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. RoHS OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Issue C 02/2012 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com Page 1 of 4 Slotted Optical Switch OPB610, OPB611, OPB620, OPB621 Absolute Maximum Ratings (T =25C unless otherwise noted) A Storage and Operating Temperature Range -40C to +100 C (1) Lead Soldering Temperature 1/16 inch (1.6mm) from the case for 5 sec. with soldering iron 260 C Input Diode Forward DC Current 50 mA Peak Forward Current (1 s pulse width, 300 pps) 3 A Reverse DC Voltage 3 V (2) Power Dissipation 100 mW Output Photodiode (OPB621) Reverse Breakdown Voltage 60 V Power Dissipation 100 mW Output Phototransistor (OPB610, OPB620) Collector-Emitter Voltage 24 V Emitter-Collector Voltage 10 mA Collector DC Current 30 mA (3) 200 mW Power Dissipation Electrical Characteristics (T = 25C unless otherwise noted) A SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode (See OP240 for additional information) Forward Voltage V OPB610, OPB620 - - 1.6 V I = 10 mA F F OPB621 1.15 - 1.45 V I = 10 mA F I Reverse Current - - 100 A V = 3 V R R Output Phototransistor (OPB610, OPB620) (See OP505 for additional information) V Collector-Emitter Breakdown Voltage 24 - - V I = 100 A (BR)CEO C BV Emitter-Collector Breakdown Voltage 0.4 - - V I = 100 A ECO CE I Collector-Emitter Dark Current - - 100 nA V = 5 V CEO CE Output Photodiode (OPB611, OPB621) (See OP999 for additional information) I Dark Current - - 65 nA V = 30 V, E = 0 mW D R E V Reverse Breakdown Voltage 60 - - V IR = 100 A, E = 0 mW (BR)R E V Forward Voltage - - 1.0 V I = 1 mA, E = 0 mW F F E Combined Collector-Emitter Saturation Voltage V SAT OPB610, OPB620 - - 0.4 V I = 5 mA, I = 100 A F C On-State Collector/Diode Current I OPB610, OPB620 1 - - mA I = 5 mA, V = 5 V (gap unblocked) C(ON) F CE OPB611, OPB621 9 - 90 A V = 5 V, I = 20 mA (gap unblocked) R F Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. A maximum of 20 grams force may be applied to leads when solder- ing. (2) Derate linearly 1.33 mW/C above 25 C. (3) Derate linearly 2.0 mW/C above 25 C. (4) Plastic body is soluble in chlorinated hydrocarbons and keytones. It is recommended that a trial exposure to flux & cleaning chemicals is performed to ensure sensor is not damaged. Issue C 02/2012 OPTEK Technology Inc. 1645 Wallace Drive, Carrollton, Texas 75006 Page 2 of 4 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors optekinc.com www.optekinc.com

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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