D1030UK

TetraFET D1030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON B G C (typ) DMOS RF FET (2 pls) 2 3 1 P 400W 28V 175MHz H D (2 pls) A 5 4 PUSHPULL E (4 pls) F I FEATURES SIMPLIFIED AMPLIFIER DESIGN N M O J K SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 LOW C rss PIN 3 DRAIN 2 PIN 4 GATE 2 SIMPLE BIAS CIRCUITS PIN 5 GATE 1 LOW NOISE DIM Millimetres Tol. Inches Tol. A 19.05 0.50 0.75 0.020 B 10.77 0.13 0.424 0.005 HIGH GAIN 13 dB MINIMUM C 45 5 45 5 D 9.78 0.13 0.385 0.005 E 5.71 0.13 0.225 0.005 F 27.94 0.13 1.100 0.005 G 1.52R 0.13 0.060R 0.005 APPLICATIONS H 10.16 0.13 0.400 0.005 I 22.22 MAX 0.875 MAX VHF/UHF COMMUNICATIONS J 0.13 0.02 0.005 0.001 from 1 MHz to 200 MHz K 2.72 0.13 0.107 0.005 M 1.70 0.13 0.067 0.005 N 5.08 0.50 0.200 0.020 O 34.03 0.13 1.340 0.005 P 1.61R 0.08 0.064R 0.003 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise stated) case P Power Dissipation 500W D BV Drain Source Breakdown Voltage 70V DSS BV Gate Source Breakdown Voltage 20V GSS I Drain Current 40A D(sat) T Storage Temperature 65 to 150C stg T Maximum Operating Junction Temperature 200C j Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5310 E-mail: sales@semelab.co.uk Website: D1030UK ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise stated) case Parameter Test Conditions Min. Typ. Max. Unit PER SIDE DrainSource Breakdown BV V = 0 I = 100mA 70 V DSS GS D Voltage Zero Gate Voltage I V = 28V V = 0 8 mA DSS DS GS Drain Current I Gate Leakage Current V = 20V V = 0 1 A GSS GS DS V Gate Threshold Voltage* I = 10mA V = V 17 V GS(th) D DS GS g Forward Transconductance* V = 10V I = 8A 6.4 mhos fs DS D Gate Threshold Voltage V I = 10mA V = V 0.1 V GS(th)match D DS GS Matching Between Sides TOTAL DEVICE G Common Source Power Gain P = 400W 13 dB PS O Drain Efficiency V = 28V I = 2A 50 % DS DQ VSWR Load Mismatch Tolerance f = 175MHz 20:1 PER SIDE C Input Capacitance V = 28V V = 5V f = 1MHz 480 pF iss DS GS C Output Capacitance V = 28V V = 0 f = 1MHz 240 pF oss DS GS C Reverse Transfer Capacitance V = 28V V = 0 f = 1MHz 20 pF rss DS GS * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA R Thermal Resistance Junction Case Max. 0.35C / W THjcase Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Document Number 5310 E-mail: sales@semelab.co.uk Website: