Product Information

TCR2EF45,LM(CT

TCR2EF45,LM(CT electronic component of Toshiba

Datasheet
LDO Voltage Regulators CMOS LDO Regulator

Manufacturer: Toshiba
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Price (USD)

3000: USD 0.0558 ea
Line Total: USD 167.4

637290 - Global Stock
Ships to you between
Thu. 02 May to Wed. 08 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
637290 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.0558
6000 : USD 0.0512
9000 : USD 0.0508
15000 : USD 0.0503
24000 : USD 0.0501
30000 : USD 0.0491
75000 : USD 0.0491
150000 : USD 0.0491

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Output Voltage
Output Current
Number of Outputs
Quiescent Current
Input Voltage MIN
Input Voltage MAX
PSRR / Ripple Rejection - Typ
Output Type
Minimum Operating Temperature
Maximum Operating Temperature
Dropout Voltage
Packaging
Product
Type
Brand
Dropout Voltage - Max
Output Voltage Range
Voltage Regulation Accuracy
Cnhts
Hts Code
Line Regulation
Load Regulation
Mxhts
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Taric
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TCR2EF series, TCR2EE series TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCR2EF series TCR2EE series 200 mA CMOS Low Dropout Regulator with Fast Load Transient Response The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of driving up to 200 mA. They feature overcurrent protection, an Auto-discharge function. The TCR2EF and TCR2EE series has a low dropout voltage of 180 mV (2.5 V output, I = 150 mA) with low output noise voltage of 35 V (2.5 OUT rms V output) and a load transient response of only VOUT = 60 mV (I = OUT 1 mA150 mA, C = 1.0 F). OUT Thus, the TCR2EF and TCR2EE series are suitable for sensitive power supply such as Analog and RF applications. SMV ESV Features Low dropout voltage Weight : V = 150 mV (typ.) at 3.0 V output, I = 150 mA SMV (SOT-25)(SC-74A) : 16 mg ( typ.) DO OUT ESV (SOT-553) : 3.0 mg ( typ.) V = 180 mV (typ.) at 2.5 V output, I = 150 mA DO OUT V = 230 mV (typ.) at 1.8 V output, I = 150 mA DO OUT V = 380 mV (typ.) at 1.2 V output, I = 150 mA DO OUT V = 510 mV (typ.) at 1.0 V output, I = 150 mA DO OUT Low output noise voltage (V = 35 Vrms (typ.) at 2.5 V output, I = 10 mA, 10 Hz < f < 100 kHz) NO OUT Fast load transient response (V = 60 mV (typ.) at I = 1 mA 150 mA, C =1.0 F) OUT OUT OUT Low quiescent bias current (I = 35 A (typ.) at I = 0 mA) B OUT High ripple rejection ratio (73 dB (typ.) at 2.5 V output, I = 10 mA, f = 1 kHz) OUT Wide range output voltage line up (V = 1.0 to 5.0 V) OUT High V accuracy 1.0 % (1.8 V V ) OUT OUT Overcurrent protection Auto-discharge Pull down connection between CONTROL and GND Ceramic capacitors can be used (C = 0.1 F, C = 1.0 F) IN OUT Small package ESV (SOT-553) (1.6 mm x 1.6 mm x 0.55 mm) General package SMV (SOT-25) (2.8 mm x 2.9 mm x 1.1 mm) Start of commercial production 2012-10 2017-2019 2019-06-20 1 Toshiba Electronic Devices & Storage Corporation TCR2EF series, TCR2EE series Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage V 6.0 V IN Control voltage V -0.3 to 6.0 V CT Output voltage V -0.3 to V + 0.3 V OUT IN 200 (Note 1) SMV 580 (Note 2) Power dissipation P mW D 150 (Note 1) ESV 320 (Note 3) Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit Rating Note 2: Rating at mounting on a board (FR4 board dimension: 25.4 mm 25.4 mm 1.6 mm) Note 3: Rating at mounting on a board (FR4 board dimension: 30 mm 30 mm 0.8 mm) Operating Ranges Characteristics Symbol Rating Unit Input voltage V 1.5 to 5.5 V (Note 4) V IN Control voltage V 0 to 5.5 V CT Output voltage V 1.0 to 5.0 V OUT Output current I DC 200 (Note 5) mA OUT Operation Temperature T -40 to 85 C opr Output Capacitance C 1.0 F OUT Input Capacitance C 0.1 F IN Note 4: I = 1 mA. OUT Please refer to Dropout voltage (Page 5) and use it within Absolute Maximum Ratings Junction temperature and Operation Temperature Ranges. Note 5: Do not operate at or near the maximum ratings of operating ranges for extended periods of time. Exposure to such conditions may adversely impact product reliability and results in failures not covered by warranty. 2017-2019 2019-06-20 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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