Product Information

SSM3K56FS,LF

SSM3K56FS,LF electronic component of Toshiba

Datasheet
Toshiba MOSFET N-Ch U-MOSVI FET ID 0.8A 20VDSS 55pF

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.124 ea
Line Total: USD 0.124

1245 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1245 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1

Stock Image

SSM3K56FS,LF
Toshiba

1 : USD 0.124
10 : USD 0.1227
25 : USD 0.1214
100 : USD 0.0729
250 : USD 0.0714
500 : USD 0.0714
1000 : USD 0.0714

1245 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 139
Multiples : 1

Stock Image

SSM3K56FS,LF
Toshiba

139 : USD 0.0729
250 : USD 0.0714

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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SSM3K56FS MOSFETs Silicon N-Channel MOS SSM3K56FSSSM3K56FSSSM3K56FSSSM3K56FS 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications High-Speed Switching 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : R = 235 m (max) ( V = 4.5 V) DS(ON) GS R = 300 m (max) ( V = 2.5 V) DS(ON) GS R = 480 m (max) ( V = 1.8 V) DS(ON) GS R = 840 m (max) ( V = 1.5 V) DS(ON) GS 3. 3. 3. 3. Packaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin ConfigurationPackaging and Pin Configuration 1: Gate 2: Source 3: Drain SSM Start of commercial production 2012-06 2014-04-04 1 Rev.2.0SSM3K56FS 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25)))) aaaa Characteristics Symbol Rating Unit Drain-source voltage V 20 V DSS Gate-source voltage V 8 GSS Drain current (DC) (Note 1) I 800 mA D Drain current (pulsed) (Note 1),(Note 2) I 1600 DP Power dissipation (Note 3) P 150 mW D Power dissipation (Note 4) P 500 mW D Channel temperature T 150 ch Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) 10 ms, duty = 1% Note 3: Mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 0.36 mm2 3) Note 4: Mounted on a FR4 board.(25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm2) Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, R , and the power dissipation, P , vary according to the th(ch-a) D board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 2014-04-04 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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