Product Information

CRH01(TE85L,Q,M)

CRH01(TE85L,Q,M) electronic component of Toshiba

Datasheet
Diode Standard 200 V 1A Surface Mount S-FLAT (1.6x3.5)

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.236 ea
Line Total: USD 1.18

499 - Global Stock
Ships to you between
Tue. 07 May to Fri. 10 May
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
499 - Global Stock


Ships to you between
Tue. 07 May to Fri. 10 May

MOQ : 5
Multiples : 5
5 : USD 0.236
50 : USD 0.1898
150 : USD 0.1701
500 : USD 0.1454
3000 : USD 0.1344
6000 : USD 0.1278

2875 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 53
Multiples : 1
53 : USD 0.2085
100 : USD 0.1394
250 : USD 0.1366

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
Height
Length
Termination Style
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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CRH01 TOSHIBA High Efficiency Rectifier Silicon Epitaxial Type CRH01 Switching Mode Power Supply Applications Unit: mm Repetitive peak reverse voltage : V = 200 V RRM Average forward current : I = 1 A F (AV) Peak forward voltage : V = 0.98 V (Max.) FM Very Fast Reverse-Recovery Time : t = 35 ns (Max.) rr Suitable for compact assembly due to small surface-mount package TM SFLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 200 V RRM Average forward current I 1 A F(AV) Non-repetitive peak forward surge current I 15 (50 Hz) A FSM Junction temperature T 40 to 150 C j JEDEC Storage temperature T 40 to 150 C stg JEITA Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 3-2A1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.013 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.71 FM (1) FM Peak forward voltage V I = 0.7 A (pulse test) 0.86 V FM (2) FM V I = 1 A (pulse test) 0.90 0.98 FM (3) FM Repetitive peak reverse current I V = 200 V (pulse test) 10 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 35 ns rr F Forward recovery time t I = 1 A 100 ns fr F Device mounted on a ceramic board board size 50 m: m 50 mm 65 soldering land size : 2 mm 2 mm Thermal resistance board thickness : 0.64 mm R C/W th (j-a) (junction to ambient) Device mounted on a glass-epoxy board board size : 50 m 5m0 mm 130 soldering land size : 6 mm 6 mm board thickness : 1.6 mm Start of commercial production 1999-07 2018-04-04 1 CRH01 Marking Abbreviation Code Part No. H1 CRH01 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Handling Precaution 1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. VRRM : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute maximum rating of V for a DC circuit and be no greater than 50% of that of V for an RRM RRM AC circuit. V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into RRM account designing a device at low temperature. I :We recommend that the worst case current be no greater than 80% of the absolute maximum rating of F (AV) I and T be below 120C. When using this device, take the margin into consideration by using an F (AV) j allowable Ta max-I curve. F (AV) IFSM :This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. Tj :Derate device parameters in proportion to this rating in order to ensure high reliability. We recommend that the junction temperature (Tj) of a device be kept below 120C. 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the circuit board design and land pattern dimensions (provided for reference only). 3) For other design considerations, see the Rectifiers databook or the Toshiba website. 2018-04-04 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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