Product Information

2SK1828(TE85L,F)

2SK1828(TE85L,F) electronic component of Toshiba

Datasheet
Trans MOSFET N-CH 20V 0.05A 3-Pin S-Mini T/R

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

561: USD 0.0699 ea
Line Total: USD 39.2139

100657 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 561  Multiples: 1
Pack Size: 1
Availability Price Quantity
94178 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 544
Multiples : 1
544 : USD 0.0676
1000 : USD 0.0639
2000 : USD 0.0626
3000 : USD 0.0614

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Drain Current Max
Frequency Max
Gate-Source Voltage Max
Output Power Max
Noise Figure
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Efficiency
Drain-Source On-Volt
Power Gain
Rad Hardened
LoadingGif

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2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Unit: mm Analog Switch Applications 2.5 V gate drive Low threshold voltage: V = 0.5 to 1.5 V th High speed Enhancement-mode Small package Marking Equivalent Circuit JEDEC TO-236MOD JEITA SC-59 TOSHIBA 2-3F1F Weight: 0.012 g (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Drain-source voltage V 20 V DS Gate-source voltage V 10 V GSS DC drain current I 50 mA D Drain power dissipation P 200 mW D Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution. Start of commercial production 1991-02 1 2014-03-01 2SK1828 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Gate leakage current I V = 10 V, V = 0 1 A GSS GS DS Drain-source breakdown voltage V I = 100 A, V = 0 20 V (BR) DSS D GS Drain cut-off current I V = 20 V, V = 0 1 A DSS DS GS Gate threshold voltage V V = 3 V, I = 0.1 mA 0.5 1.5 V th DS D Forward transfer admittance Y V = 3 V, I = 10 mA 20 mS fs DS D Drain-source ON resistance R I = 10 mA, V = 2.5 V 20 40 DS (ON) D GS Input capacitance C V = 3 V, V = 0, f = 1 MHz 5.5 pF iss DS GS Reverse transfer capacitance C V = 3 V, V = 0, f = 1 MHz 1.6 pF rss DS GS Output capacitance C V = 3 V, V = 0, f = 1 MHz 6.5 pF oss DS GS Turn-on time t V = 3 V, I = 10 mA, V = 0 to 2.5 V 0.14 on DD D GS Switching time s Turn-off time t V = 3 V, I = 10 mA, V = 0 to 2.5 V 0.14 off DD D GS Switching Time Test Circuit 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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