Product Information

TMMDB3TG

TMMDB3TG electronic component of STMicroelectronics

Datasheet
Diac; Ifmax:2A; MiniMELF; 30÷34V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

89: USD 0.1513 ea
Line Total: USD 13.47

4704 - Global Stock
Ships to you between
Tue. 23 Apr to Mon. 29 Apr
MOQ: 89  Multiples: 1
Pack Size: 1
Availability Price Quantity
4704 - Global Stock


Ships to you between Tue. 23 Apr to Mon. 29 Apr

MOQ : 1
Multiples : 1

Stock Image

TMMDB3TG
STMicroelectronics

1 : USD 0.1544
10 : USD 0.1529
25 : USD 0.1513
100 : USD 0.0793
250 : USD 0.0629
500 : USD 0.0616
1000 : USD 0.0616
3000 : USD 0.0616

2003 - Global Stock


Ships to you between Tue. 23 Apr to Mon. 29 Apr

MOQ : 5
Multiples : 5

Stock Image

TMMDB3TG
STMicroelectronics

5 : USD 0.2054
25 : USD 0.1716
100 : USD 0.1521
135 : USD 0.1235
365 : USD 0.117

4704 - Global Stock


Ships to you between Tue. 23 Apr to Mon. 29 Apr

MOQ : 89
Multiples : 1

Stock Image

TMMDB3TG
STMicroelectronics

89 : USD 0.1513
100 : USD 0.0793
250 : USD 0.0629
500 : USD 0.0616

53350 - Global Stock


Ships to you between Tue. 23 Apr to Mon. 29 Apr

MOQ : 2500
Multiples : 2500

Stock Image

TMMDB3TG
STMicroelectronics

2500 : USD 0.1019
10000 : USD 0.0979
25000 : USD 0.0959

     
Manufacturer
Product Category
Mounting
Kind Of Package
Case
Type Of Semiconductor Component
Max Load Current
Breakover Voltage
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TMMDB3TG Datasheet Diac in MINIMELF package with tight V BO Features V : 32 V BO Low breakover voltage: 15 A max. Breakover voltage range: 30 to 34 V Applications General purpose AC line load switching Motor control circuits Home appliances MINIMELF Heating Lighting Inrush current limiting circuits Overvoltage crowbar protection Description Functioning as a trigger diode with a fixed voltage reference, the TMMDB3TG can be used in conjunction with Triacs for simplified gate control circuits or as a starting element in fluorescent lamp ballasts. Product status link TMMDB3TG Product summary Order code V BO TMMDB3TG 30 - 34 V DS0700 - Rev 3 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office.TMMDB3TG Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values), T = 25 C unless otherwise specified j Symbol Parameter Value Unit I Repetitive peak on-state current, t = 20 s, F = 120 Hz 2 A TRM p T Storage junction temperature range -40 to +125 C stg T Operating junction temperature range -40 to +125 C j Table 2. Electrical characteristics (T = 25 C unless otherwise specified) j Symbol Parameter Test conditions Value Unit Min. 30 (1) (2) V Breakover voltage C = 10 nF Typ. 32 V BO Max. 34 (2) I V - V I Breakover voltage symmetry Max. 2 V BO1 BO2 C = 10 nF (1) V V and V at 10 mA Min. 9 V Dynamic breakover voltage BO F (1) V See Figure 2. Test circuit , (R = 20 ) Min. 5 V O Output voltage (1) (2) I Breakover current C = 10 nF Max. 15 A BO (1) t Rise time See Figure 3. Rise time measurement Max. 2 s r (1) I V = 0.5 x V max Leakage current Max. 10 A R R BO (1) I Peak current See Figure 2. Test circuit Min. 0.30 A P 1. Applicable to both forward and reverse directions. 2. Connected in parallel to the device Figure 1. Voltage - current characteristic curve. +I F 10 mA I BO I - V R +V 0,5 V BO V V V F BO - I F DS0700 - Rev 3 page 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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