Product Information

PD54008S-E

PD54008S-E electronic component of STMicroelectronics

Datasheet
Trans RF MOSFET N-CH 25V 5A 3-Pin PowerSO-10RF (Straight lead) Tube
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1

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PD54008S-E
STMicroelectronics

1 : USD 15.5412
10 : USD 14.5368
25 : USD 14.1048
100 : USD 12.636
400 : USD 11.8152
N/A

Obsolete
0 - Global Stock

MOQ : 50
Multiples : 50

Stock Image

PD54008S-E
STMicroelectronics

50 : USD 10.9799
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Operating Temp Range
Screening Level
Number Of Elements
Drain Source Voltage Max
Reverse Capacitance Typ
Input Capacitance Typ Vds
Vswr Max
Output Capacitance Typ Vds
Mounting
Channel Type
Channel Mode
Power Gain Typ Vds
Drain Efficiency Typ
Rad Hardened
Forward Transconductance Typ
Pin Count
Frequency Max
Height
Length
Width
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

PD54008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 11.5dB gain 500 MHz/7.5 V OUT New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs PowerSO-10RF latest LDMOS technology mounted in the first true (straight lead) SMD plastic RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for portable radio. Figure 1. Pin connection The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Table 1. Device summary Order code Package Packing PD54008-E PowerSO-10RF (formed lead) Tube PD54008S-E PowerSO-10RF (straight lead) Tube PD54008TR-E PowerSO-10RF (formed lead) Tape and reel PD54008STR-E PowerSO-10RF (straight lead) Tape and reel May 2011 Doc ID 12271 Rev 3 1/29 www.st.com 29Contents PD54008-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD54008-E . 7 4.2 PD54008S-E 10 5 Test circuit 13 6 Circuit layout 15 7 Common source s-parameter 16 8 Package mechanical data 22 9 Revision history . 28 2/29 Doc ID 12271 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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