LM833N

LM833 Low noise dual operational amplifier Features Low voltage noise: 4.5 nV/Hz High gain bandwidth product: 15 MHz N High slew rate: 7 V/s DIP8 Low distortion: 0.002% (Plastic package) Excellent frequency stability ESD protection 2 kV Applications D Audio systems SO-8 Preamplification, filtering (Plastic micropackage) Description The LM833 is a monolithic dual operational amplifier particularly well-suited to audio Pin connections (top view) applications. It offers low voltage noise (4.5 nV/Hz) and high frequency performances (15 MHz gain bandwidth + 1 8 V Output 1 CC product, 7 V/s slew rate). Inverting input 1 2 - 7 Output 2 In addition, the LM833 has a very low distortion + Non-inverting input 1 3 - 6 Inverting input 2 (0.002%) and excellent phase/gain margins. + V -45 Non-inverting input 2 CC August 2009 Doc ID 2169 Rev 3 1/12 www.st.com 12Absolute maximum ratings LM833 1 Absolute maximum ratings Table 1. Key parameters and their absolute maximum ratings Symbol Parameter Value Unit V Supply voltage 18 or +36 V CC (1) V 30 V id Differential input voltage (1) V 15 V Input voltage i (2) Input current : V driven negative 5 mA in DC or 50 mA in in AC (duty cycle = 10%, T=1s) I mA in (3) Input current : V driven positive above in AMR value 0.4 Output short-circuit duration Infinite s T Junction temperature +150 C j T Storage temperature -65 to +150 C stg (4) Ptot 500 mW Maximum power dissipation (5) 2kV HBM: human body model (6) ESD 200 V MM: machine model (7) 1.5 kV CDM: charged device model + - 1. Either or both input voltages must not exceed the magnitude of Vcc or Vcc . 2. This input current only exists when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistor becoming forward-biased and thereby acting as input diode clamp. In addition to this diode action, there is NPN parasitic action on the IC chip. This transistor action can cause the output voltages of the Op-amps to go to the V voltage level (or to ground for a large CC overdrive) for the time during which an input is driven negative. This is not destructive and normal output is restored for input voltages above -0.3 V. 3. The junction base/substrate of the input PNP transistor polarized in reverse must be protected by a resistor in series with the inputs to limit the input current to 400 A max (R = (Vin - 36 V)/400 A). 4. Power dissipation must be considered to ensure maximum junction temperature (Tj) is not exceeded. 5. Human body model: 100 pF discharged through a 1.5 k resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 6. Machine model: a 200 pF capacitor is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5 ), done for all couples of pin combinations with other pins floating. 7. Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to the ground. Table 2. Operating conditions Symbol Parameter Value Unit V Supply voltage 2.5 to 15 V CC T Operating free-air temperature range -40 to 105 C oper 2/12 Doc ID 2169 Rev 3