Product Information

ESDAULC6-3BP6

ESDAULC6-3BP6 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes N Ch 30V 0.009 Ohm 40A Pwr MOSFET

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.3352 ea
Line Total: USD 1005.6

32010 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
32010 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

ESDAULC6-3BP6
STMicroelectronics

3000 : USD 0.3352
6000 : USD 0.3285
9000 : USD 0.3285
24000 : USD 0.3285

355 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 40
Multiples : 1

Stock Image

ESDAULC6-3BP6
STMicroelectronics

40 : USD 0.806
75 : USD 0.7345
300 : USD 0.676
1500 : USD 0.6045

1 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 1
Multiples : 1

Stock Image

ESDAULC6-3BP6
STMicroelectronics

1 : USD 1.0667
10 : USD 0.9733
30 : USD 0.9153
100 : USD 0.855
500 : USD 0.8276
1000 : USD 0.8162

32010 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

ESDAULC6-3BP6
STMicroelectronics

3000 : USD 0.35

5820 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

ESDAULC6-3BP6
STMicroelectronics

3000 : USD 0.4046
6000 : USD 0.3965

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Capacitance
Dimensions
Brand
Channels
Mounting Style
Case Height
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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ESDAULC6-3BP6 ESDAULC6-3BF2 ESD protection for high speed interface Main applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Computers Printers SOT-666 Flip-Chip Communication systems ESDAULC6-3BP6 ESDAULC6-3BF2 Cellular phones handsets and accessories Video equipment Figure 1. Functional diagram A B Features 1 I/O1 6 GND I/O1 GND 1 Ultra low capacitance 1.25 pF max. 2 5 NC NC Bi-directional protection 34 I/O3 I/O2 RoHS package I/O2 I/O3 2 Top view Bump side view Description ESDAULC6-3BP6 ESDAULC6-3BF2 The ESDAULC6-3Bxx is a monolithic application specific discrete device dedicated to ESD Figure 2. Pin configuration protection of high speed interfaces such as I/O1 I/O2 I/O3 USB2.0. The device is ideal for applications where both reduced print circuit board space and power absorption capability are required. Benefits GND Ultra low capacitance bidirectional ESD Table 1. Order codes protection Part number Marking Low PCB space consumption: 2 2 2.5 mm max footprint (1.7 mm for Flip-Chip) ESDAULC6-3BP6 3 Enhanced ESD protection: ESDAULC6-3BF2 3B 15 kV contact discharge Complies with the following standards: 15 kV air discharge IEC 61000-4-2 level 4: No insertion loss to 3.0 GHz 8 kV (contact discharge) Ultra low leakage current 15 kV (air discharge) High reliability offered by monolithic integration MIL STD 883G-Method 3015-7: class 3B HBM (Human Body Model) July 2007 Rev 1 1/11 www.st.com 11Characteristics ESDAULC6-3BP6, ESDAULC6-3BF2 1 Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value (min.) Unit IEC 61000-4-2 contact discharge 15 (1) V Peak pulse voltage kV PP IEC 61000-4-2 air discharge 15 T Maximum operating junction temperature 150 C j T Storage temperature range -55 to +150 C stg T Maximum lead temperature for soldering during 10 s at 5 mm for case 260 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 3. Electrical characteristics (T = 25 C) amb Symbol Parameter I V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL V V V CL BR RM V I Leakage current RM I RM V V V RM BR CL I Peak pulse current PP T Voltage temperature coefficient Slope: 1/R d C Capacitance IPP R Dynamic resistance d Parameter Test condition Min Typ Max Unit (1) V I = 1 mA 6.0 9.2 V BR R I V = 5 V 0.5 A RM RM R Square pulse, I = 6 A, t = 2.5 s 1.4 d PP p -4 T 1.2 10 /C SOT-666 1.0 1.25 V = 0 V, I/O F = 1 MHz, V = 30 mV OSC Flip-Chip 1.25 1.5 C pF i/o-i/o SOT-666 0.75 0.9 V = 1.65 V, V = 4.3 V, I/O CC F = 1 MHz, V = 400 mV OSC Flip-Chip 0.9 1.20 1. Same value for I/O to I/O and I/O to GND 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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