BAR43SFILM

BAR42 BAR43 Small signal Schottky diode Datasheet - production data Description General purpose metal to silicon diodes featuring 1F . very low turn-on voltage and fast switching Table 1. Device summary % 5 ),/0 % 5 ),/0 % 5 ),/0 Symbol Value I 0.1 A F(AV) . V 30 V . RRM . T 150 C j . V (max) 0.33 and 0.40 V F % 5 &),/0 % 5 6),/0 SOT23-3L Features Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount device July 2017 DocID3288 Rev 5 1/7 This is information on a product in full production. www.st.comCharacteristics BAR42, BAR43 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak off-state voltage 30 V DRM I Continuous forward current 0.1 A F(AV) I Surge non repetitive forward current t = 10 ms sinusoidal 0.75 A FSM p (1) P Power dissipation T = 25 C 250 mW tot amb T Maximum Storage temperature range - 65 to + 150 C stg (2) T Maximum operating junction temperature 150 C j T Maximum temperature for soldering during 10 s 260 C L 1. For double diodes, P is the total dissipation of both diodes tot 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink. Rth(j-a) dTj Table 3. Thermal parameter Symbol Parameter Value Unit (1) R Junction to ambient 500 C/W th(j-a) 1. Mounted on epoxy board with recommended pad layout. Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Breakdown V T = 25 C I = 100 A 30 V BR j R voltage T = 25 C 500 nA j Reverse leakage (1) I V = V R R RRM current T = 100 C 100 A j I = 10 mA 0.35 0.40 F BAR42 I = 50 mA 0.50 0.65 F Forward voltage (2) V T = 25 C I = 2 mA 0.26 0.33 V F j F drop BAR43 I = 15 mA 0.45 F ALL I =100 mA 1 F 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p 2/7 DocID3288 Rev 5