Product Information

JANTXV2N4858

JANTXV2N4858 electronic component of Solitron

Datasheet
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS

Manufacturer: Solitron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 29.7582 ea
Line Total: USD 29.76

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

JANTXV2N4858
Solitron

1 : USD 29.7582

0 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1

Stock Image

JANTXV2N4858
Solitron

1 : USD 29.7582

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Brand
Rad Hardened
Gate-Source Voltage Max
Package Type
Pin Count
LoadingGif

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2N4856 | 2N4857 | 2N4858 N-CHANNEL JFETS - 1 KEY FEATURES JAN/JANTX/JANTXV STANDARD PRODUCTS QUALIFIED PER MIL-PRF-19500/385 LOW ON RESISTANCE FAST SWITCHING HIGH OFF ISOLATION S LEVEL EQUIVALENT SCREENING OPTIONS RADIATION TOLERANT SECOND SOURCE FOR VISHAY & SILICONIX Part Number Package 19500/ Breakdown Voltage Current R DS(on) 2N4856 TO-18 385 40V 175mA 25 2N4857 TO-18 385 40V 100mA 40 2N4858 TO-18 385 40V 80mA 60 ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage -40V Storage Temperature -65 to 200C Gate Current 50mA Operating Junction Temperature -65 to 200C Lead Temperature Power Dissipation 1800mW 300C (1/16 from case, 10 sec) Derating 10.3mW/C to TC 25C ORDERING GUIDE JAN2N4856 JANTX2N4856 JANTXV2N4856 JAN2N4857 JANTX2N4857 JANTXV2N4857 JAN2N4858 JANTX2N4858 JANTXV2N4858 PACKAGE OUTLINE & PIN CONNECTIONS CD Dimensions P Ltr Inches mm CH G and Case Min. Max. Min. Max. Q CD 0.178 0.195 4.52 4.95 3 CH 0.170 0.210 4.32 5.33 L1 LU HD 0.209 0.230 5.31 5.84 SEATING LL 2.54 TP L2 LC 0.100 TP PLATE LD 0.016 0.021 0.41 0.53 LL 0.500 0.750 2.70 19.05 LU 0.016 0.019 0.41 0.48 LD L1 0.050 1.27 2 1 L2 0.250 6.35 HD P 0.100 2.54 Q 0.030 0.76 1 2 S D TL 0.028 0.048 0.71 1.22 TW 0.036 0.046 0.91 1.17 C L r 0.010 0.25 45 TP TW 3 r TL LC CALL: +1 561-848-4311 www.solitrondevices.com EMAIL: sales@solitrondevices.com2N4856 | 2N4857 | 2N4858 N-CHANNEL JFETS - 2 ELECTRICAL SPECIFICATIONS Typical @ 25C unless otherwise noted Parameter Symbol Min. Max. Unit Gate-Source Breakdown Voltage V -40 Vdc (BR)GSS V =0Vdc, I = 1.0Adc DS G Gate-Source Off State Voltage V = 15Vdc, I = 0.5nAdc 2N4856 -4 -10 Vdc DS D V GS(on) 2N4857 -2 -6 Vdc 2N4858 -0.8 -4 Vdc Gate Reverse Current V = 0Vdc, V = -20Vdc I -0.25 nA DS GS GSS V = 0Vdc, V = -15Vdc -0.25 nA DS GS Drain Current V = 15Vdc, V = -10Vdc 0.25 nA DS GS V = 15Vdc, V = 0Vdc 2N4856 I 50 175 mA DS GS D(off) 2N4857 20 100 mA 2N4858 8 80 mA Static Drain - Source On State Resistance V = 0Vdc, I = 1mAdc 2N4856 25 GS D R DS(on) 2N4857 40 2N4858 60 Drain Source On State Voltage V = 0Vdc, I = 20mAdc 2N4856 0.75 Vdc GS D V DS(on) V = 0Vdc, I = 10mAdc 2N4857 0.5 Vdc GS D V = 0Vdc, I = 5mAdc 2N4858 0.5 Vdc GS D Small Signal, Common Source Reverse Transfer Capacitance V = -10Vdc V , V = 0Vdc, f = 1.0MHz C 8 pF GS DS D rss C = 0.1F, L1 =L2 500H 1 Small Signal, Common Source Short-Circuit Input Capacitance V = -10Vdc V , VD = 0Vdc, f = 1.0MHz GS DS C 8 pF iss C = 0.1F, C2 = 20.1m 1 F = L 500H L1 2 Turn On Delay Time 2N4856 6 nS t D(on) 2N4857 6 nS 2N4858 10 nS Rise Time 2N4856 3 nS t r 2N4857 4 nS 2N4858 10 nS Turn Off Delay Time 2N4856 25 nS t d(off) 2N4857 50 nS 2N4858 100 nS 2019 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. 3301 Electronics Way, West Palm Beach, Florida 33407, USA +1 561-848-4311 sales@solitrondevices.com 2n4856_8-ds-revC-0319.indd

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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