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SiT8008BC-81-33E-4.718592X

SiT8008BC-81-33E-4.718592X electronic component of SiTime

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Programmable Oscillators 4.718592MHz 3.3V -20C +70C

Manufacturer: SiTime
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1: USD 2.2497 ea
Line Total: USD 2.25

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10 : USD 1.6254
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500 : USD 1.1979
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5000 : USD 1.0224
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SiT8008B Low Power Programmable Oscillator Features Applications ow Power, Standard Frequency Oscillator Any frequency between 1 MHz and 110 MHz accurate to Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books, 6 decimal places SSD, GPON, EPON, etc 100% pin-to-pin drop-in replacement to quartz-based XO Ideal for high-speed serial protocols such as: USB, Excellent total frequency stability as low as 20 ppm SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc. Operating temperature from -40C to 85C. For 125C and/or -55C options, refer to SiT1618, SiT8918, SiT8920 Low power consumption of 3.5 mA typical at 1.8 V Qualify just one device with 1.62 V to 3.63 V continuous supply voltage option Standby mode for longer battery life Fast startup time of 5 ms LVCMOS/HCMOS compatible output Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm x mm Instant samples with Time Machine II and Field Programmable Oscillators RoHS and REACH compliant, Pb-free, Halogen-free and Antimony-free For AEC-Q100 oscillators, refer to SiT8924 and SiT8925 Electrical Characteristics All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated. Typical values are at 25C and nominal supply voltage. Table 1. Electrical Characteristics Parameters Symbol Min. Typ. Max. Unit Condition Frequency Range Output Frequency Range f 1 110 MHz Frequency Stability and Aging Frequency Stability F stab -20 +20 ppm Inclusive of initial tolerance at 25C, 1st year aging at 25C, and variations over operating temperature, rated power supply voltage -25 +25 ppm and load. -50 +50 ppm Operating Temperature Range Operating Temperature T use -20 +70 C Extended Commercial Range -40 +85 C Industrial Supply Voltage and Current Consumption Supply Voltage Options Vdd 1.8 Contact SiTime for 1.5 V support 1.62 1.8 1.98 V Vdd 2.5 2.25 2.5 2.75 V Vdd 2.8 2.52 2.8 3.08 V Vdd 3.0 2.7 3.0 3.3 V Vdd 3.3 2.97 3.3 3.63 V Vdd XX 2.25 3.63 V Vdd YY 1.62 3.63 V Current Consumption Idd 3.8 4.5 mA No load condition, f = 20 MHz, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX, Vdd YY 3.7 4.2 mA No load condition, f = 20 MHz, Vdd 2.5 3.5 4.1 mA No load condition, f = 20 MHz, Vdd 1.8 OE Disable Current I OD 4.2 mA Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX, Vdd YY. OE = GND, Output in high-Z state 4.0 mA Vdd 1.8. OE = GND, Output in high-Z state Standby Current I std 2.1 4.3 A ST = GND, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX, Vdd YY. Output is weakly pulled down 1.1 2.5 A ST = GND, Vdd 2.5, Output is weakly pulled down 0.2 1.3 A ST = GND, Vdd 1.8, Output is weakly pulled down 1.07 3 November 2021 www.sitime.com SiT8008B Low Power Programmable Oscillator Table 1. Electrical Characteristics (continued) Parameters Symbol Min. Typ. Max. Unit Condition LVCMOS Output Characteristics Duty Cycle DC 45 55 % All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6 Rise/Fall Time Tr, Tf 1 2 ns 20% - 80% Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3 1.3 2.5 ns 20% - 80% Vdd 1.8 2 ns 20% - 80% Vdd XX 2.7 ns 20% - 80% Vdd YY Output High Voltage VOH 90% Vdd IOH = -4 mA (Vdd 3.0 and Vdd 3.3) IOH = -3 mA (Vdd 2.8 and Vdd 2.5) IOH = -2 mA (Vdd 1.8) Output Low Voltage VOL 10% Vdd IOL = 4 mA (Vdd 3.0 and Vdd 3.3) IOL = 3 mA (Vdd 2.8 and Vdd 2.5) IOL = 2 mA (Vdd 1.8) Input Characteristics Input High Voltage VIH 70% Vdd Pin 1, OE or ST Input Low Voltage VIL 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z in 50 87 150 k Pin 1, OE logic high or logic low, or ST logic high 2 M Pin 1, ST logic low Startup and Resume Timing Startup Time T start 5 ms Measured from the time Vdd reaches its rated minimum value Enable/Disable Time T oe 130 ns f = 110 MHz. For other frequencies, T oe = 100 ns + 3 * cycles Resume Time T resume 5 ms Measured from the time ST pin crosses 50% threshold Jitter RMS Period Jitter T jitt 1.8 3 ps f = 75 MHz, Vdd 1.8, Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX, 3.3 ps f = 75 MHz, Vdd YY Peak-to-peak Period Jitter T pk 12 25 ps f = 75 MHz, Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX, Vdd YY 14 30 ps f = 75 MHz, Vdd 1.8 RMS Phase Jitter (random) T phj 0.5 0.9 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd 1.8, Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX 1.3 2 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd 1.8, Vdd 2.5, Vdd 2.8, Vdd 3.0, Vdd 3.3, Vdd XX 1.4 ps f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz. Vdd YY 2.3 ps f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz. Vdd YY Table 2. Pin Description Top View Pin Symbol Functionality 1 H : specified frequency output Output Enable L: output is high impedance. Only output driver is disabled. OE/ST /NC 1 H : specified frequency output 1 OE/ST /NC Standby L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I std. 1 Any voltage between 0 and Vdd or Open : Specified frequency No Connect output. Pin 1 has no function. 2 GND Power Electrical ground 3 OUT Output Oscillator output Figure 1. Pin Assignments 2 4 VDD Power Power supply voltage Notes: 1. In OE or ST mode, a pull-up resistor of 10 k or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option. 2. A capacitor of value 0.1 F or higher between Vdd and GND is required. 1.07 Page 2 of 18 www.sitime.com

Tariff Desc

8541.60.00 25 No - Mounted piezo-electric crystals Free
SiTime
SiTime Corporation

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