Product Information

RCD051N20TL

RCD051N20TL electronic component of ROHM

Datasheet
Trans MOSFET N-CH 200V 5A Automotive 3-Pin(2+Tab) CPT T/R

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9912 ea
Line Total: USD 0.99

2293 - Global Stock
Ships to you between
Fri. 26 Apr to Thu. 02 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2293 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 1
Multiples : 1
1 : USD 0.9912
10 : USD 0.7869
100 : USD 0.6157

1137 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 122
Multiples : 1
122 : USD 0.7904
250 : USD 0.7746

2425 - Global Stock


Ships to you between Fri. 26 Apr to Thu. 02 May

MOQ : 122
Multiples : 1
122 : USD 0.7904
250 : USD 0.767
500 : USD 0.7517

     
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RCD051N20 Nch 200V 5.0A Power MOSFET Data Sheet l Outline V 200V DSS CPT3 (SC-63) R (Max.) 760mW DS(on) <SOT-428> (3) I 5.0A D (2) (1) P 20W D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 16 Switching Power Supply Type Basic ordering unit (pcs) 2,500 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking C51N20 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 5.0 A c D Continuous drain current *1 T = 100C A I 2.7 c D *2 Pulsed drain current I 20 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 1.83 mJ E AS *3 Avalanche current I 2.5 A AR T = 25C P 20 W c D Power dissipation *4 P T = 25C 0.85 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 1/12Data Sheet RCD051N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 6.25 C/W Thermal resistance, junction - case thJC *4 R - - 147 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 2.5A - 540 760 GS D Static drain - source *5 V = 10V, I = 2.5A R mW GS D DS(on) on - state resistance - 785 1100 T = 125C j g V = 10V, I = 2.5A Forward transfer admittance 1.3 2.6 - S fs DS D www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.01 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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