EMD9 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-563 V 50V CC SC-107C I 100mA C(MAX.) R 10k 1 R 47k EMT6 2 <For DTr2(PNP)> Parameter Value V -50V CC I -100mA C(MAX.) R 10k 1 R 47k 2 llFeatures llInner circuit 1)DTA114Y and DTC114Y transistor are built-in a EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD9 FHA 1616 T2R 180 8 8000 D9 (EMT6) www.rohm.com 1/7 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.EMD9 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit Supply voltage V 50 -50 V CC V Input voltage -6 to 40 -40 to 6 V IN I Output current 70 -70 mA O *1 I Collector current 100 -100 mA C(MAX) *2*3 P Power dissipation 150 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 5V, I = 100A - - 0.3 I(off) CC O Input voltage V V V = 0.3V, I = 1mA 1.4 - - I(on) O O V I = 5mA, I = 0.25mA Output voltage - 100 300 mV O(on) O I I V = 5V Input current - - 880 A I I I V = 50V, V = 0V Output current - - 500 nA O(off) CC I G V = 5V, I = 5mA DC current gain 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = 10V, I = -5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = -5V, I = -100A - - -0.3 I(off) CC O Input voltage V V V = -0.3V, I = -1mA -1.4 - - I(on) O O V Output voltage I = -5mA, I = -0.25mA - -100 -300 mV O(on) O I I Input current V = -5V - - -880 A I I I Output current V = -50V, V = 0V - - -500 nA O(off) CC I G V = -5V, I = -5mA DC current gain 68 - - - I O O R Input resistance - 7 10 13 k 1 R /R Resistance ratio - 3.7 4.7 5.7 - 2 1 V = -10V, I = 5mA, CE E *1 f Transition frequency - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor. *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.