Product Information

FOD3150TSR2V

FOD3150TSR2V electronic component of ON Semiconductor

Datasheet
Logic Output Opto-couplers 1A GATE DRV OPTOCOUP 10MM SMD VDE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.9025 ea
Line Total: USD 2.9

171 - Global Stock
Ships to you between
Mon. 06 May to Wed. 08 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
171 - Global Stock


Ships to you between Mon. 06 May to Wed. 08 May

MOQ : 1
Multiples : 1

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FOD3150TSR2V
ON Semiconductor

1 : USD 2.3
10 : USD 1.5755
100 : USD 1.265
700 : USD 1.1362
1400 : USD 1.0166
2100 : USD 1.0166
4900 : USD 1.0028

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Output Type
Isolation Voltage
Series
Packaging
Output Device
Brand
Number Of Channels Per Chip
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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Gate Drive Optocoupler, High Noise Immunity, 1.0 A Output Current FOD3150 Description www.onsemi.com The FOD3150 is a 1.0 A Output Current Gate Drive Optocoupler, capable of driving most 800 V / 20 A IGBT / MOSFET. It is ideally suited for fast switching driving of power IGBT and MOSFETs used in motor control inverter applications, and high performance power system. 8 8 It utilizes ON Semiconductor patented coplanar packaging 1 1 technology, Optoplanar , and optimized IC design to achieve high PDIP8 GW PDIP8 GW noise immunity, characterized by high common mode rejection. CASE 709AD CASE 709AC It consists of a gallium aluminum arsenide (AlGaAs) light emitting diode optically coupled to an integrated circuit with a highspeed driver for pushpull MOSFET output stage. Features 8 8 High Noise Immunity characterized by 20 kV/ s minimum Common 1 1 Mode Rejection PDIP8 6.6x3.81, 2.54P PDIP8 9.655x6.6, 2.54P Use of Pchannel MOSFETs at Output Stage Enables Output Voltage CASE 646BW CASE 646CQ Swing close to the Supply Rail Wide Supply Voltage Range from 15 V to 30 V FUNCTIONAL BLOCK DIAGRAM Fast Switching Speed 500 ns maximum Propagation Delay 300 ns maximum Pulse Width Distortion 1 8 NC V Under Voltage LockOut (UVLO) with Hysteresis DD Extended Industrial Temperate Range, 40C to 100C Temperature Range ANODE 2 7 V O2 Safety and Regulatory Approvals UL1577, 5000 V for 1 minute RMS 6 CATHODE 3 V DIN EN/IEC6074755 O1 >8.0 mm Clearance and Creepage Distance (Option T) This is a PbFree Device 5 NC 4 V SS Applications Industrial Inverter Note: A 0.1 F bypass capacitor must be Uninterruptible Power Supply connected between pins 5 and 8. Induction Heating Isolated IGBT/Power MOSFET Gate Drive ORDERING INFORMATION See detailed ordering and shipping information in the package Related Resources dimensions section on page 12 of this data sheet. FOD3120, 2.5 A Output Current, Gate Drive Optocoupler Datasheet www.onsemi.com/products/opto/ Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: January, 2021 Rev. 5 FOD3150/DFOD3150 Table 1. TRUTH TABLE LED V V Positive Going (Turnon) V V Negative Going (Turnoff) V DD SS DD SS O Off 0 V to 30 V 0 V to 30 V Low On 0 V to 11 V 0 V to 9.7 V Low On 11 V to 14 V 9.7 V to 12.7 V Transition On 14 V to 30 V 12.7 V to 30 V High Table 2. PIN DEFINITIONS Pin Name Description 1 NC Not Connected 2 Anode LED Anode 3 Cathode LED Cathode 4 NC Not Connected 5 V Negative Supply Voltage SS 6 Output Voltage 2 (internally connected to V ) V O2 O1 7 V Output Voltage 1 O1 8 V Positive Supply Voltage DD Table 3. SAFETY AND INSULATION RATINGS As per IEC 6074752. This optocoupler is suitable for safe electrical insulation only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Symbol Parameter Min. Typ. Max. Unit Installation Classifications per DIN VDE 0110/1.89 Table 1 IIV For Rated Main Voltage < 150 Vrms For Rated Main Voltage < 300 Vrms IIV For Rated Main Voltage < 450 Vrms IIII For Rated Main Voltage < 600 Vrms IIII Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 CTI Comparative Tracking Index 175 V Input to Output Test Voltage, Method b, 1669 PR V x 1.875 = V , 100% Production Test with tm = 1 s, IORM PR Partial Discharge < 5 pC Input to Output Test Voltage, Method a, 1335 V x 1.5 = V , Type and Sample Test with tm = 60 s, IORM PR Partial Discharge < 5 pC V Max Working Insulation Voltage 890 Vpeak IORM V Vpeak Highest Allowable Over Voltage 6000 IOTM External Creepage 8 mm External Clearance 7.4 mm External Clearance (for Option T0.4 Lead Spacing) 10.16 mm Insulation Thickness 0.5 mm T Safety Limit Values Maximum Values Allowed in the Event of a Failure C Case 150 Case Temperature I Input Current 25 mA S,INPUT P Output Power (Duty Factor 2.7 %) 250 mW S,OUTPUT 9 10 R Insulation Resistance at T , V = 500 V S IO IO www.onsemi.com 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
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ON Semicon
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