714212DB

BAS16 Small Signal Diode February 2015 BAS16 Small Signal Diode Connection Diagram 3 3 3 A6 2 1 2 1 1 2NC SOT-23 Ordering Information Part Number Top Mark Package Packing Method BAS16 A6 SOT-23 3L Tape and Reel, 7 inch Reel, 3000 pcs BAS16_D87Z A6 SOT-23 3L Tape and Reel, 13 inch Reel, 10000 pcs (1), (2) Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit V Maximum Repetitive Reverse Voltage 85 V RRM I Average Rectified Forward Current 200 mA F(AV) Pulse Width = 1.0 second 1.0 Non-Repetitive Peak Forward I A FSM Surge Current Pulse Width = 1.0 microsecond 2.0 T Storage Temperature Range -55 to +150 C STG T Operating Junction Temperature -55 to +150 C J Notes: 1. These ratings are based on a maximum junction temperature of 150C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS16 Rev. 1.3 BAS16 Small Signal Diode Thermal Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Value Unit P Power Dissipation 350 mW D R Thermal Resistance, Junction-to-Ambient 357 C/W JA Electrical Characteristics Values are at T = 25C unless otherwise noted. A Symbol Parameter Conditions Min. Max. Unit V Breakdown Voltage I = 5.0 A85 V R R I = 1.0 mA 715 mV F I = 10 mA 855 mV F V Forward Voltage F I = 50 mA 1.0 V F I = 150 mA 1.25 V F V = 75 V 1.0 R I Reverse Current V = 25 V, T = 150C 30 A R R A V = 75 V, T = 150C 50 R A C Total Capacitance V = 0, f = 1.0 MHz 2.0 pF T R I = I = 10 mA, I = 1.0 mA, F R RR t Reverse Recovery Time 6.0 ns rr R = 100 L 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com BAS16 Rev. 1.3 2