Product Information

MW7IC930NBR1

MW7IC930NBR1 electronic component of NXP

Datasheet
RF Amplifier IC W-CDMA 728MHz ~ 768MHz, 920MHz ~ 960MHz TO-272 WB-16

Manufacturer: NXP
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Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 108.796
10 : USD 97.8302
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Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 108.796
10 : USD 97.8302
N/A

Obsolete
0 - Global Stock


Multiples : 1
N/A

Obsolete
0 - Global Stock

MOQ : 500
Multiples : 500
500 : USD 64.6573
N/A

Obsolete
     
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DocumentNumber:MW7IC930N FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFLDMOSWidebandIntegrated MW7IC930NR1 PowerAmplifiers MW7IC930GNR1 The MW7IC930N wideband integrated circuit is designed with on--chip matching that makes it usable from 728 to 960 MHz. This multi--stage MW7IC930NBR1 structureisratedfor24to32Voltoperationandcoversalltypicalcellularbase station modulation. DriverApplication900MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = 728--768MHz,920--960MHz, DD DQ1 106mA, I = 285mA, P = 3.2Watts Avg., IQ MagnitudeClipping, DQ2 out 3.2WAVG.,28V ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% SINGLEW--CDMA Probability onCCDF. RFLDMOSWIDEBAND G PAE ACPR INTEGRATEDPOWERAMPLIFIERS ps (1) Frequency (dB) (%) (dBc) 920MHz 36.6 16.1 --48.0 CASE1886--01 940MHz 36.8 16.7 --48.7 TO--270WB--16 960MHz 36.6 17.3 --48.6 PLASTIC Capableof Handling10:1VSWR, 32Vdc, 940MHz, 48Watts CW MW7IC930NR1 Output Power (3dB Input Overdrivefrom RatedP ) out Stableintoa5:1VSWR. AllSpurs Below --60dBc 1mW to30Watts CW P . CASE1887--01 out TO--270WB--16GULL Typical P 1dB CompressionPoint 31Watts CW, I =40mA, out DQ1 I = 340mA PLASTIC DQ2 MW7IC930GNR1 DriverApplication700MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ1 106mA, I = 285mA, P = 3.2Watts Avg., IQ MagnitudeClipping, DQ2 out ChannelBandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01% Probability onCCDF. CASE1329--09 G PAE ACPR ps TO--272WB--16 Frequency (dB) (%) (dBc) PLASTIC 728MHz 36.4 16.1 --47.7 MW7IC930NBR1 748MHz 36.4 16.1 --47.8 768MHz 36.4 16.0 --47.9 Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters andCommonSourceS--Parameters On--ChipMatching(50Ohm Input, DC Blocked, >5Ohm Output) (2) IntegratedQuiescent Current TemperatureCompensationwithEnable/ DisableFunction IntegratedESD Protection 225C CapablePlastic Package GND 1 16 GND 2 RoHSCompliant NC 15 NC NC 3 InTapeandReel. R1Suffix = 500Units per 44mm, 13inchReel. V 4 DS1 GND 5 RF 6 14 V RF /V DS1 in out DS2 7 GND V 8 RF GS1 RF /V in out DS2 V 9 GS2 NC 10 13 NC GND 12 11 GND V GS1 QuiescentCurrent (TopView) (2) V TemperatureCompensation GS2 Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.FunctionalBlockDiagram Figure2.PinConnections 1. 900MHz DriverFrequency Bandtabledatacollectedin the900MHz applicationtestfixture.SeeFig.7. 2. RefertoAN1977,QuiescentCurrentThermalTrackingCircuitintheRFIntegratedCircuitFamilyandtoAN1987,QuiescentCurrentControl fortheRFIntegratedCircuitDeviceFamily.GotoTable1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+65 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J InputPower P 20 dBm in Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC (CaseTemperature80C,3.2W CW) Stage1,28Vdc,I =106mA 5.5 DQ1 Stage2,28Vdc,I =285mA 1.6 DQ2 (CaseTemperature80C,30W CW) Stage1,28Vdc,I =40mA 5.8 DQ1 Stage2,28Vdc,I =340mA 1.2 DQ2 Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) II (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit Stage1OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =1.5Vdc,V =0Vdc) GS DS Stage1OnCharacteristics GateThresholdVoltage V 1.2 2 2.7 Vdc GS(th) (V =10Vdc,I =14Adc) DS D GateQuiescentVoltage V 2.8 Vdc GS(Q) (V =28Vdc,I =106mA) DS DQ1 (4) FixtureGateQuiescentVoltage V 6.9 9.4 11.9 Vdc GG(Q) (V =28Vdc,I =106mA,MeasuredinFunctionalTest) DD DQ1 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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