Document Number: MW7IC2040N
Freescale Semiconductor
Rev. 1, 11/2009
Technical Data
RF LDMOS Wideband Integrated
MW7IC2040NR1
Power Amplifiers
MW7IC2040GNR1
The MW7IC2040N wideband integrated circuit is designed with on-chip
matching that makes it usable from 1805 to 1990 MHz. This multi-stage
MW7IC2040NBR1
structure is rated for 24 to 32 Volt operation and covers all typical cellular base
station modulation formats.
Typical Single-Carrier W-CDMA Performance: V = 28 Volts, I =
DD DQ1
130 mA, I = 330 mA, P = 4 Watts Avg., f = 1932.5, Channel
DQ2 out
1930-1990 MHz, 1805-1880 MHz,
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
4 W AVG., 28 V
on CCDF.
SINGLE W-CDMA, GSM EDGE, GSM
Power Gain 32 dB
Power Added Efficiency 17.5% RF LDMOS WIDEBAND
ACPR @ 5 MHz Offset -50 dBc in 3.84 MHz Bandwidth
INTEGRATED POWER AMPLIFIERS
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW
Output Power (3 dB Input Overdrive from Rated P )
out
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts
CASE 1886-01
CW P .
out
TO-270 WB-16
Typical P @ 1 dB Compression Point 30 Watts CW
out
PLASTIC
GSM EDGE Application
MW7IC2040NR1
Typical GSM EDGE Performance: V = 28 Volts, I = 90 mA, I =
DD DQ1 DQ2
430 mA, P = 16 Watts Avg., 1805-1880 MHz
out
Power Gain 33 dB
CASE 1887-01
Power Added Efficiency 35%
Spectral Regrowth @ 400 kHz Offset = -62 dBc TO-270 WB-16 GULL
Spectral Regrowth @ 600 kHz Offset = -77 dBc PLASTIC
EVM 1.5% rms MW7IC2040GNR1
GSM Application
Typical GSM Performance: V = 28 Volts, I = 90 mA, I = 430 mA,
DD DQ1 DQ2
P = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz CASE 1329-09
out
Power Gain 31 dB TO-272 WB-16
Power Added Efficiency 50% PLASTIC
MW7IC2040NBR1
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
and Common Source S-Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output)
Integrated Quiescent Current Temperature Compensation with Enable/
(1)
Disable Function
Integrated ESD Protection
225C Capable Plastic Package
RoHS Compliant
GND
1
16 GND
V 2
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. DS1
NC
15
V
GS2 3
V
4
GS1
NC
5
V
DS1
RF 6 14 RF /V
in out DS2
NC 7
RF RF /V
in out DS2 V
8
GS1
V 9
GS2
NC
V 10 13
DS1
GND 12 GND
11
V
GS1 Quiescent Current
(1)
V Temperature Compensation (Top View)
GS2
Note: Exposed backside of the package is
V
DS1
the source terminal for the transistors.
Figure 1. Functional Block Diagram Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain-Source Voltage V -0.5, +65 Vdc
DSS
Gate-Source Voltage V -0.5, +10 Vdc
GS
Operating Voltage V 32, +0 Vdc
DD
Storage Temperature Range T -65 to +150 C
stg
Case Operating Temperature T 150 C
C
(1,2)
Operating Junction Temperature T 225 C
J
Input Power P 25 dBm
in
Table 2. Thermal Characteristics
(2,3)
Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case R C/W
JC
W-CDMA
(P = 4 W Avg., Case Temperature = 73C) Stage 1, 28 Vdc, I = 130 mA 4.0
out DQ1
Stage 2, 28 Vdc, I = 330 mA 1.5
DQ2
GSM EDGE
(P = 16 W Avg., Case Temperature = 76C) Stage 1, 28 Vdc, I = 130 mA 4.1
out DQ1
Stage 2, 28 Vdc, I = 330 mA 1.4
DQ2
GSM
(P = 40 W Avg., Case Temperature = 79C) Stage 1, 28 Vdc, I = 130 mA 3.9
out DQ1
Stage 2, 28 Vdc, I = 330 mA 1.3
DQ2
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22-A114) 1B (Minimum)
Machine Model (per EIA/JESD22-A115) A (Minimum)
Charge Device Model (per JESD22-C101) III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22-A113, IPC/JEDEC J-STD-020 3 260 C
Table 5. Electrical Characteristics (T = 25C unless otherwise noted)
C
Characteristic Symbol Min Typ Max Unit
Stage 1 Off Characteristics
Zero Gate Voltage Drain Leakage Current I 10 Adc
DSS
(V = 65 Vdc, V = 0 Vdc)
DS GS
Zero Gate Voltage Drain Leakage Current I 1 Adc
DSS
(V = 28 Vdc, V = 0 Vdc)
DS GS
Gate-Source Leakage Current I 1 Adc
GSS
(V = 1.5 Vdc, V = 0 Vdc)
GS DS
Stage 1 On Characteristics
Gate Threshold Voltage V 1.2 2 2.7 Vdc
GS(th)
(V = 10 Vdc, I = 25 Adc)
DS D
Gate Quiescent Voltage V 2.7 Vdc
GS(Q)
(V = 28 Vdc, I = 130 mAdc)
DS DQ1
Fixture Gate Quiescent Voltage V 13 14.5 16 Vdc
GG(Q)
(V = 28 Vdc, I = 130 mAdc, Measured in Functional Test)
DD DQ1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at