DocumentNumber:MRF8P9040N FreescaleSemiconductor Rev. 1, 10/2010 TechnicalData RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF8P9040NR1 DesignedforCDMA,W--CDMAandLTEbasestationapplicationswith MRF8P9040GNR1 frequencies from 700 to 1000 MHz. Can be used in Class AB and Class C for MRF8P9040NBR1 alltypicalcellular basestationmodulationformats. DriverApplication900MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 320mA, P = 4.0Watts Avg., IQ MagnitudeClipping, Channel 728--960MHz,4.0WAVG.,28V out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability CDMA,W--CDMA,LTE onCCDF. LATERALN--CHANNEL RFPOWERMOSFETs G ACPR ps D Frequency (dB) (%) (dBc) 920MHz 18.9 18.9 --49.6 940MHz 19.1 19.5 --50.1 CASE1486--03,STYLE1 960MHz 19.1 19.9 --48.8 TO--270 WB--4 Capableof Handling10:1VSWR, 32Vdc, 940MHz, 63Watts CW PLASTIC MRF8P9040NR1 Output Power (3dB Input Overdrivefrom RatedP ), Designedfor out EnhancedRuggedness Typical P 1dB CompressionPoint 42Watts CW out DriverApplication700MHz TypicalSingle--Carrier W--CDMA Performance: V =28Volts,I = DD DQ 320mA, P = 4.0Watts Avg., IQ MagnitudeClipping, Channel CASE1487--05,STYLE1 out Bandwidth= 3.84MHz, Input SignalPAR = 7.5dB 0.01%Probability TO--270 WB--4 GULL PLASTIC onCCDF. MRF8P9040GNR1 G ACPR ps D Frequency (dB) (%) (dBc) 728MHz 19.9 18.7 --49.9 748MHz 20.1 19.1 --50.0 768MHz 20.0 19.5 --49.9 CASE1484--04,STYLE1 TO--272 WB--4 Features PLASTIC MRF8P9040NBR1 CharacterizedwithSeries Equivalent Large--SignalImpedanceParameters andCommonSourceS--Parameters Internally Matchedfor Easeof Use IntegratedESD Protection Greater NegativeGate--SourceVoltageRangefor ImprovedClass C RF /V RF /V inA GSA outA DSA 32 Operation Designedfor DigitalPredistortionError CorrectionSystems Optimizedfor Doherty Applications RF /V41 RF /V inB GSB outB DSB 225C CapablePlastic Package RoHSCompliant InTapeandReel. R1Suffix = 500Units, 44mm TapeWidth, 13inchReel. (TopView) Note: Exposed backside of the package is thesourceterminalforthetransistors. Figure1.PinConnections FreescaleSemiconductor, Inc., 2010. All rights reserved. MRF8P9040NR1MRF8P9040GNR1MRF8P9040NBR1 RF DeviceData FreescaleSemiconductor 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V --0.5,+70 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS OperatingVoltage V 32,+0 Vdc DD StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit (4) ThermalResistance,JunctiontoCase R C/W JC CaseTemperature77C,4.0W CW,28Vdc,I =320mA,960MHz 1.5 DQ CaseTemperature81C,40W CW,28Vdc,I =320mA,960MHz 1.3 DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B (Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) III (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =70Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 1 Adc DSS (V =28Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS (4) OnCharacteristics GateThresholdVoltage V 1.5 2.3 3.0 Vdc GS(th) (V =10Vdc,I =170Adc) DS D GateQuiescentVoltage V 2.3 3.1 3.8 Vdc GS(Q) (V =28Vdc,I =320mAdc,MeasuredinFunctionalTest) DD D Drain--SourceOn--Voltage V 0.1 0.17 0.3 Vdc DS(on) (V =10Vdc,I =0.55Adc) GS D 1. Continuous useatmaximum temperaturewillaffectMTTF. 2. MTTFcalculatoravailableat