Product Information

MRF300AN

MRF300AN electronic component of NXP

Datasheet
RF MOSFET Transistors RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 53.659 ea
Line Total: USD 53.659

80 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
47 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1
1 : USD 55.246
10 : USD 50.761
30 : USD 48.53
60 : USD 48.07
120 : USD 45.9885

     
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RoHS - XON
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Cnhts
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Mxhts
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DocumentNumber:MRF300AN NXPSemiconductors Rev. 2, 06/2019 Technical Data RFPowerLDMOSTransistors MRF300AN High Ruggedness N--Channel MRF300BN Enhancement--Mode Lateral MOSFETs ThesedevicesaredesignedforuseinHFandVHFcommunications, industrial,scientificandmedical(ISM)andbroadcastandaerospace applications. The devices are extremely rugged and exhibit high performance 1.8250MHz,300WCW,50V up to 250 MHz. WIDEBAND RFPOWERLDMOSTRANSISTORS TypicalPerformance: V =50Vdc DD Frequency P G out ps D (MHz) SignalType (W) (dB) (%) (1) 13.56 320 CW 28.1 79.7 (2) 27 330 CW 27.4 80.0 (3) 40.68 330 CW 28.2 79.0 CW (4) 50 320 CW 27.3 73.0 (5) 81.36 325 CW 25.1 77.5 G S (6) 144 320 CW 23.0 73.0 D (7) 230 Pulse 330 Peak 20.4 75.5 TO--247--3 (100 sec, 20%Duty Cycle) MRF300AN LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result 40.68 Pulse >65:1 at all 2 Peak 50 No Device (100 sec, 20% Phase (3 dB Degradation Duty Cycle) Angles Overdrive) 230 Pulse >65:1 at all 6 Peak 50 No Device D (100 sec, 20% Phase (3 dB Degradation S Duty Cycle) Angles Overdrive) G 1. Measured in 13.56 MHz reference circuit (page 5). TO--247--3 2. Measured in 27 MHz reference circuit (page 10). D MRF300BN 3. Measured in 40.68 MHz reference circuit (page 15). 4. Measured in 50 MHz reference circuit (page 20). 5. Measured in 81.36 MHz reference circuit (page 25). 6. Measured in 144 MHz reference circuit (page 30). 7. Measured in 230 MHz fixture (page 35). G Features Mirror pinout versions (A and B) to simplify use in a push--pull, S two--up configuration Characterizedfrom30to50V Suitable for linear application Backside Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation Note: Exposed backside of the package Included in NXP product longevity program with assured also serves as a source terminal supply for a minimum of 15 years after launch forthe transistor. TypicalApplications Industrial, scientific, medical (ISM) Laser generation Plasma etching Particleaccelerators MRI and other medical applications Industrial heating, welding and dryingsystems Radio and VHF TV broadcast HF and VHF communications Switch mode power supplies 20182019NXP B.V. MRF300ANMRF300BN RF DeviceData NXP Semiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5, +133 Vdc DSS Gate--Source Voltage V 6.0, +10 Vdc GS Operating Voltage V 50 Vdc DD Storage Temperature Range T 65to+150 C stg Case Operating Temperature Range T 40 to +150 C C (1,2) Operating Junction Temperature Range T 40 to +175 C J TotalDevice Dissipation T =25 C P 272 W C D Derate above 25 C 1.82 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case R 0.55 C/W JC CW: Case Temperature 76 C, 300 W CW, 50 Vdc, I =50 mA, 40.68 MHz DQ ThermalImpedance, Junction to Case Z 0.13 C/W JC Pulse: Case Temperature 74C, 300 W Peak, 100 sec Pulse Width, 20%Duty Cycle, 50 Vdc, I =100 mA, 230 MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJS--001--2017) 2, passes 2500 V Charge Device Model(perJS--002--2014) C3, passes 1200 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit (4) PerJESD22--A113, IPC/JEDEC J--STD--020 0 225 C Table5.ElectricalCharacteristics (T =25 C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 133 Vdc (BR)DSS (V =0Vdc,I =50mAdc) GS D Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =840 Adc) DS D Gate Quiescent Voltage V 2.5 Vdc GS(Q) (V =50Vdc,I =100 mAdc) DS D Drain--Source On--Voltage V 0.16 Vdc DS(on) (V =10Vdc,I =1Adc) GS D Forward Transconductance g 28 S fs (V =10Vdc,I =30Adc) DS D 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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