Product Information

MRF1K50H-TF1

MRF1K50H-TF1 electronic component of NXP

Datasheet
Sub-GHz Development Tools MRF1K50H 87.5-108 MHz Reference Circuit

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 1145.9888
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Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Minimum Operating Temperature
Maximum Operating Temperature
Operating Frequency
Output Power
Package / Case
Series
Technology
Type
Brand
Forward Transconductance - Min
Gain
Mounting Style
Number Of Channels
Transistor Polarity
Id - Continuous Drain Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Voltage
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
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DocumentNumber:MRF1K50H NXPSemiconductors Rev.1.1,03/2017 TechnicalData RFPowerLDMOSTransistor HighRuggednessN--Channel MRF1K50H Enhancement--ModeLateralMOSFET Thishighruggednessdeviceisdesignedforuseinhigh VSWRindustrial, scientific and medical applications, as well as radio and VHF TV broadcast, 1.8500MHz,1500WCW,50V sub--GHzaerospaceandmobileradioapplications.Itsunmatchedinputand WIDEBAND outputdesignallowsforwidefrequencyrangeusefrom1.8to500MHz. RFPOWERLDMOSTRANSISTOR TypicalPerformance:V =50Vdc DD Frequency P G out ps D (MHz) SignalType (W) (dB) (%) 27 CW 1550CW 25.9 78.3 (1) 81.36 CW 1400CW 23.0 75.0 (2,3) 87.5108 CW 1475CW 23.3 83.4 (4) 230 Pulse 1500Peak 23.7 74.0 (100 sec,20%DutyCycle) NI--1230H--4S LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (W) Voltage Result (4) 230 Pulse >65:1atall 13Peak 50 NoDevice GateA 3 1 DrainA (100sec,20% PhaseAngles (3dB Degradation DutyCycle) Overdrive) 1. Datafrom81.36MHznarrowbandreferencecircuit(page11). 2. Datafrom87.5108MHzbroadbandreferencecircuit(page5). 4 2 DrainB GateB 3. Thevaluesshownarethecenterbandperformancenumbersacrosstheindicated frequencyrange. 4. Datafrom230MHznarrowbandproductiontestfixture(page16). (TopView) Features Note: Thebacksideofthepackageisthe Highdrain--sourceavalancheenergyabsorptioncapability sourceterminalforthetransistor. Unmatchedinputandoutputallowingwidefrequencyrangeutilization Figure1.PinConnections Devicecanbeusedsingle--endedorinapush--pullconfiguration Characterizedfrom30to50Vforeaseofuse Suitableforlinearapplication IntegratedESDprotectionwithgreaternegativegate--sourcevoltagerange forimprovedClassCoperation Recommendeddriver:MRFE6VS25N(25W) Lowerthermalresistancepartavailable:MRF1K50N IncludedinNXPproductlongevityprogramwithassuredsupplyfora minimumof15yearsafterlaunch TypicalApplications Industrial,scientific,medical(ISM) Lasergeneration Plasmaetching Particleaccelerators MRIandothermedicalapplications Industrialheating,weldinganddryingsystems Broadcast Radiobroadcast VHFTVbroadcast Aerospace VHFomnidirectionalrange(VOR) HFandVHFcommunications Weatherradar Mobileradio VHFandUHFbasestations 20162017NXPB.V. MRF1K50H RFDeviceData NXPSemiconductors 1Table1.MaximumRatings Rating Symbol Value Unit Drain--SourceVoltage V 0.5,+135 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS OperatingVoltage V 50 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+225 C J TotalDeviceDissipation T =25C P 1667 W C D Derateabove25C 8.33 W/C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 0.10 C/W JC CW:CaseTemperature78C,1500WCW,50Vdc,I =200mA,88MHz DQ(A+B) ThermalImpedance,JunctiontoCase Z 0.028 C/W JC Pulse:CaseTemperature73C,1500WPeak,100 secPulseWidth,20%DutyCycle, I =100mA,230MHz DQ(A+B) Table3.ESDProtectionCharacteristics TestMethodology Class HumanBodyModel(perJESD22--A114) 2,passes2500V MachineModel(perEIA/JESD22--A115) B,passes250V ChargeDeviceModel(perJESD22--C101) IV,passes2000V Table4.ElectricalCharacteristics (T =25Cunlessotherwisenoted) A Characteristic Symbol Min Typ Max Unit (4) OffCharacteristics Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 135 Vdc (BR)DSS (V =0Vdc,I =30 Adc) GS D ZeroGateVoltageDrainLeakageCurrent I 10 Adc DSS (V =50Vdc,V =0Vdc) DS GS ZeroGateVoltageDrainLeakageCurrent I 20 Adc DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (4) GateThresholdVoltage V 1.7 2.2 2.7 Vdc GS(th) (V =10Vdc,I =2130Adc) DS D GateQuiescentVoltage V 1.9 2.4 2.9 Vdc GS(Q) (V =50Vdc,I =100mAdc,MeasuredinFunctionalTest) DD D(A+B) (4) Drain--SourceOn--Voltage V 0.15 Vdc DS(on) (V =10Vdc,I =2.4Adc) GS D (4) ForwardTransconductance g 33.5 S fs (V =10Vdc,I =36Adc) DS D 1. ContinuoususeatmaximumtemperaturewillaffectMTTF. 2. MTTFcalculatoravailableat

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