Product Information

LTE3401HX

LTE3401HX electronic component of NXP

Datasheet
RF Amplifier MMIC

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4864 ea
Line Total: USD 0.4864

4295 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4198 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 0.4864
10 : USD 0.391
100 : USD 0.3082
500 : USD 0.2725
1000 : USD 0.207
5000 : USD 0.2012
10000 : USD 0.1978
25000 : USD 0.1955
50000 : USD 0.1909

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Input Return Loss
Isolation Db
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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LTE3401H SiGe:C low-noise amplifier MMIC with bypass switch for LTE Rev. 3 28 June 2019 Product data sheet 1 General description The LTE3401H is a high-gain Low-Noise Amplifier (LNA) with bypass switch for LTE receiver applications, available in a small plastic 6-pin thin leadless package. The LTE3401H delivers system-optimized gain for both primary and diversity applications where sensitivity improvement is required. The high linearity of this low noise device ensures the required receive sensitivity independent of cellular transmit power level in frequency division duplex (FDD) systems. When receive signal strength is sufficient, the LTE3401H can be switched off to operate in bypass mode at increased IP3 level and a 1 i A supply current, to lower power consumption. The LTE3401H is internally AC coupled and requires only one external matching inductor. The LTE3401H is optimized for 1710 MHz to 2690 MHz, but supports 1452 MHz - 1710 MHz as well. 2 Features and benefits Operating frequency from 1452 MHz to 2690 MHz Noise figure = 0.65 dB Gain 19.5 dB High input 1 dB compression point of -10.5 dBm High in band IP3 of +2 dBm i Bypass switch insertion loss of 2.7 dB Supply voltage 1.5 V to 3.1 V Integrated RF supply decoupling capacitor Optimized performance at a supply current of 13.4 mA Bypass mode current consumption < 1 A Integrated temperature stabilized bias for easy design Requires only one input matching inductor Input and Output AC coupled through DC blocking capacitors Integrated matching for the output ESD protection on all pins Low bill of materials (BOM) 6 pins leadless package: 1.1 mm x 0.7 mm x 0.37 mm: 0.40 mm pitch 180 GHz transit frequency - SiGe:C technology Moisture sensitivity Level 1 XSON6NXP Semiconductors LTE3401H SiGe:C low-noise amplifier MMIC with bypass switch for LTE 3 Applications LNA for LTE reception in smart phones feature phones tablet PCs RF front-end modules LTE3401H All information provided in this document is subject to legal disclaimers. NXP B.V. 2019. All rights reserved. Product data sheet Rev. 3 28 June 2019 2 / 17

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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