K6510

BUK6510-75C N-channel TrenchMOS FET Rev. 02 13 December 2010 Product data sheet 1. Product profile 1.1 General description Standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using advanced TrenchMOS technology. This product has been designed and qualified to the appropriate AEC Q101 standard for use in high performance automotive applications. 1.2 Features and benefits AEC Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for intermediate level gate drive sources 1.3 Applications 12 V Automotive systems Start-Stop micro-hybrid applications Electric and electro-hydraulic power Transmission control steering Ultra high performance power Motors, lamps and solenoid control switching management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175C --75 V DS j j I drain current V =10V; T =25C; --77 A D GS mb see Figure 1 P total power T = 25 C; see Figure 2 --158W tot mb dissipation Static characteristics R drain-source on-state V =10V; I =25A; -8.9 10.4m DSon GS D resistance T =25C; see Figure 13 j V =5V; I =15A; T =25C; -11.113 m GS D j see Figure 14 Avalanche ruggedness E non-repetitive I =77A; V 75 V; --122mJ DS(AL)S D sup drain-source R =50 ; V =10V; GS GS avalanche energy T = 25 C; unclamped j(init)BUK6510-75C NXP Semiconductors N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base; connected to drain mbb076 S 12 3 SOT78A (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK6510-75C TO-220AB plastic single-ended package; heatsink mounted; 1 mounting SOT78A hole; 3-lead TO-220AB BUK6510-75C All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 13 December 2010 2 of 16