Product Information

BUK7626-100B,118

BUK7626-100B,118 electronic component of Nexperia

Datasheet
N-Channel 100 V 49A (Tc) 157W (Tc) Surface Mount D2PAK

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 2.01
10 : USD 1.7293
100 : USD 1.39
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 2.01
10 : USD 1.7293
100 : USD 1.39
N/A

Obsolete
0 - Global Stock

MOQ : 800
Multiples : 800
800 : USD 1.1778
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 2.1829
10 : USD 1.6128
100 : USD 1.2655
500 : USD 1.0268
800 : USD 0.8886
2400 : USD 0.8281
4800 : USD 0.817
9600 : USD 0.817
24800 : USD 0.8158
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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BUK7626-100B N-channel TrenchMOS standard level FET Rev. 2 2 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for standard level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175 C - - 100 V V DS j j voltage I drain current V =10V T =25C --49 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --157W tot mb dissipation Static characteristics drain-source V =10V I =25A - 2226m R DSon GS D on-state T =25C see Figure 11 j resistance see Figure 12BUK7626-100B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =49A V 100 V --144mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A -13 -nC GD GS D V =80 V T =25C DS j see Figure 13 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make a connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7626-100B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) BUK7626-100B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 2 February 2011 2 of 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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