Product Information

BT169D-L,112

BT169D-L,112 electronic component of WeEn Semiconductor

Datasheet
SCRs Thyristor SCR 400V 9A Bulk

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5278 ea
Line Total: USD 0.5278

9263 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8588 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

BT169D-L,112
WeEn Semiconductor

1 : USD 0.3795
10 : USD 0.2841
100 : USD 0.1771
1000 : USD 0.0966
5000 : USD 0.0886
10000 : USD 0.077
25000 : USD 0.0736
50000 : USD 0.0701
100000 : USD 0.0679

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
On State Rms Current It Rms
Factory Pack Quantity :
Rohs Mouser
Off-State Leakage Current Vdrm Idrm
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Subcategory
Taric
LoadingGif

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BT169D-L SCR 5 September 2018 Product data sheet 1. General description Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. 2. Features and benefits Planar passivated for voltage ruggedness and reliability Very sensitive gate 3. Applications Ignition circuits Low power latching circuits Protection / shut-down circuits: lighting ballasts Protection / shut-down circuits: Switched Mode Power Supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 400 V RRM voltage I average on-state half sine wave T 83 C Fig. 1 - - 0.5 A T(AV) lead current I RMS on-state current half sine wave T 83 C Fig. 2 - - 0.8 A T(RMS) lead Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 9 A TSM j(init) state current t = 8.3 ms p half sine wave T = 25 C - - 8 A j(init) t = 10 ms Fig. 4 Fig. 5 p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C - - 50 A GT D T j Fig. 7 Dynamic characteristics dV /dt rate of rise of off-state V = 268 V T = 125 C R = 1 k 500 800 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12WeEn Semiconductors BT169D-L SCR Symbol Parameter Conditions Min Typ Max Unit V = 268 V T = 125 C (V = 67% - 25 - V/s DM j DM of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 A anode A K G 2 G gate sym037 3 K cathode 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT169D-L TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT169D-L All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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