Product Information

BT152X-800R,127

BT152X-800R,127 electronic component of NXP

Datasheet
NXP Semiconductors SCRs RAIL SCR

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1178 ea
Line Total: USD 1.1178

5820 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1
1 : USD 1.1178
10 : USD 0.9534
100 : USD 0.7832
500 : USD 0.6854
1000 : USD 0.5807
2000 : USD 0.5761
5000 : USD 0.5761
10000 : USD 0.5543
25000 : USD 0.5393

3 - Global Stock


Ships to you by Fri. 29 Mar

MOQ : 1
Multiples : 1
1 : USD 2.027
10 : USD 1.8427
25 : USD 1.7199
50 : USD 1.6585
100 : USD 1.5356

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Vf - Forward Voltage
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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BT152X-800R SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F)full pac plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits High blocking voltage capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability Very high current surge capability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average on-state half sine wave T 43 C - - 13 A T(AV) h current I RMS on-state current half sine wave T 43 C Fig. 1 - - 20 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 200 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 220 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 3 32 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT152X-800R SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 536 V T = 125 C (V = 67% 200 300 - V/s D DM j DM voltage of V ) gate open circuit exponential DRM waveform Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT152X-800R TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT152X-800R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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