Product Information

BT148W-600R,115

BT148W-600R,115 electronic component of NXP

Datasheet
NXP Semiconductors SCRs 1A 600V

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7292 ea
Line Total: USD 0.73

16276 - Global Stock
Ships to you between
Mon. 29 Apr to Wed. 01 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
8664 - Global Stock


Ships to you between Mon. 29 Apr to Wed. 01 May

MOQ : 1
Multiples : 1
1 : USD 0.5048
10 : USD 0.4404
100 : USD 0.3323
500 : USD 0.2691
1000 : USD 0.2139
2000 : USD 0.1966
10000 : USD 0.1794
25000 : USD 0.1771
50000 : USD 0.1736

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
Off-State Leakage Current Vdrm Idrm
Package Case
Brand
Non Repetitive On-State Current
Factory Pack Quantity :
Current Rating
Type
Cnhts
Hts Code
Product Type
Subcategory
Taric
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BT148W-600R SCR 4 September 2018 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 (SC-73) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications Adapters Battery powered applications Industrial automation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 600 V RRM voltage I average on-state half sine wave T 112 C Fig. 1 - - 0.6 A T(AV) sp current I RMS on-state current half sine wave T 112 C Fig. 2 - - 1 A T(RMS) sp Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 10 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 11 A j(init) t = 8.3 ms p T junction temperature 1 - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 9 - 50 200 A GT D T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C R = 100 - 50 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 14WeEn Semiconductors BT148W-600R SCR 1 Operation above 110C may require the use of a gate to cathode resistor of 1k or less. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mb connected to anode SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT148W-600R SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BT148W-600R All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 4 September 2018 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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