Product Information

BT138X-800

BT138X-800 electronic component of NXP

Datasheet
BT138X-800 PHILIPS TRIAC T/HOLE

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5884 ea
Line Total: USD 1.5884

496 - Global Stock
Ships to you by
Fri. 29 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
496 - Global Stock


Ships to you by Fri. 29 Mar

MOQ : 1
Multiples : 1
1 : USD 1.5884
25 : USD 0.7942
50 : USD 0.7147
75 : USD 0.5957
100 : USD 0.5361

     
Manufacturer
Product Category
Holding Current Ih Max
Maximum Operating Temperature
Minimum Operating Temperature
Mounting Style
Packaging
Off State Leakage Current Vdrm Idrm
On State Voltage
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
LoadingGif

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DISCRETE SEMICONDUCTORS DATA SHEET BT138X series Triacs Product specification July 2001NXP Semiconductors Product specification Triacs BT138X series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a full pack plastic SYMBOL PARAMETER MAX. MAX. UNIT envelope, intended for use in applications requiring high bidirectional BT138X- 600 800 transient and blocking voltage capability BT138X- 600F 800F and high thermal cycling performance. Typical applications include motor V Repetitive peak off-state 600 800 V DRM control, industrial and domestic lighting, voltages heating and static switching. I RMS on-state current 12 12 A T(RMS) I Non-repetitive peak on-state 95 95 A TSM current PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal 2 3 gate G 12 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -600 -800 1 V Repetitive peak off-state - 600 800 V DRM voltages I RMS on-state current full sine wave T 56 C - 12 A T(RMS) hs I Non-repetitive peak full sine wave T = 25 C prior to TSM j on-state current surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A T TM G on-state current after dI /dt = 0.2 A/s G triggering T2+ G+ - 50 A/s T2+ G- - 50 A/s T2- G- - 50 A/s T2- G+ - 10 A/s I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. July 2001 1 Rev 1.400

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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