Product Information

BT138X-800

Product Image X-ON

Datasheet
BT138X-800 PHILIPS TRIAC T/HOLE
Manufacturer: NXP



Price (Ex GST)

From 0.7736

514 - Global Stock
Ships to you by
Mon. 20 Sep
MOQ: 1 Multiples:1
Pack Size :   1
Availability Price Quantity
514 - Global Stock


Ships to you by Mon. 20 Sep

MOQ : 1
Multiples : 1
1 : $ 2.292
25 : $ 1.146
50 : $ 1.0314
75 : $ 0.8595
100 : $ 0.7736

     
Manufacturer
NXP
Product Category
Triacs
Holding Current Ih Max
30 mA
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
-
Mounting Style
Through Hole
Packaging
Tube
Off State Leakage Current Vdrm Idrm
0.1 mA
On State Voltage
1.65 V
Package Case
TO - 220 - 3 FP
Rated Repetitive Off State Voltage Vdrm
800 V
Brand
Nxp Semiconductors
Gate Trigger Current Igt
70 mA
Gate Trigger Voltage Vgt
1.5 V
Non Repetitive On State Current
105 A
Factory Pack Quantity :
50
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DISCRETE SEMICONDUCTORS DATA SHEET BT138X series Triacs Product specification July 2001NXP Semiconductors Product specification Triacs BT138X series GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a full pack plastic SYMBOL PARAMETER MAX. MAX. UNIT envelope, intended for use in applications requiring high bidirectional BT138X- 600 800 transient and blocking voltage capability BT138X- 600F 800F and high thermal cycling performance. Typical applications include motor V Repetitive peak off-state 600 800 V DRM control, industrial and domestic lighting, voltages heating and static switching. I RMS on-state current 12 12 A T(RMS) I Non-repetitive peak on-state 95 95 A TSM current PINNING - SOT186A PIN CONFIGURATION SYMBOL PIN DESCRIPTION case 1 main terminal 1 T2 T1 2 main terminal 2 3 gate G 12 3 case isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -600 -800 1 V Repetitive peak off-state - 600 800 V DRM voltages I RMS on-state current full sine wave T 56 C - 12 A T(RMS) hs I Non-repetitive peak full sine wave T = 25 C prior to TSM j on-state current surge t = 20 ms - 95 A t = 16.7 ms - 105 A 2 2 2 ItI t for fusing t = 10 ms - 45 A s dI /dt Repetitive rate of rise of I = 20 A I = 0.2 A T TM G on-state current after dI /dt = 0.2 A/s G triggering T2+ G+ - 50 A/s T2+ G- - 50 A/s T2- G- - 50 A/s T2- G+ - 10 A/s I Peak gate current - 2 A GM V Peak gate voltage - 5 V GM P Peak gate power - 5 W GM P Average gate power over any 20 ms period - 0.5 W G(AV) T Storage temperature -40 150 C stg T Operating junction - 125 C j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. July 2001 1 Rev 1.400

Tariff Concession Code
Tariff Desc

Free
8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

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