Product Information

BT131-600,116

BT131-600,116 electronic component of WeEn Semiconductor

Datasheet
Triacs Thyristor TRIAC 600V 13.8A 3-Pin

Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6077 ea
Line Total: USD 0.61

11514 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
10225 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

BT131-600,116
WeEn Semiconductor

1 : USD 0.437
10 : USD 0.3335
100 : USD 0.1748
1000 : USD 0.1288
2500 : USD 0.1254
10000 : USD 0.1162
30000 : USD 0.1162
50000 : USD 0.1116
100000 : USD 0.1104

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
On-State RMS Current - It RMS
Non Repetitive On-State Current
Rated Repetitive Off-State Voltage VDRM
On-State Voltage
Holding Current Ih Max
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Maximum Operating Temperature
Minimum Operating Temperature
Package / Case
Mounting Style
Off-State Leakage Current Vdrm Idrm
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Taric
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BT131-600 4Q Triac 4 October 2016 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT54 plastic package intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits Direct interfacing to logic level ICs Direct interfacing to low power gate drive circuits and microcontrollers High blocking voltage capability Planar passivated for voltage ruggedness and reliability Triggering in all four quadrants Very sensitive gate 3. Applications Air conditioner indoor fan control General purpose motor control General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- - - 600 V DRM state voltage I RMS on-state current full sine wave T 51 C Fig. 1 - - 1 A T(RMS) lead Fig. 2 Fig. 3 I non-repetitive peak on- full sine wave T = 25 C - - 12.5 A TSM j(init) state current t = 20 ms Fig. 4 Fig. 5 p full sine wave T = 25 C - - 13.7 A j(init) t = 16.7 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T2+ G+ - 0.4 3 mA GT D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2+ G- - 1.3 3 mA D T T = 25 C Fig. 7 j V = 12 V I = 0.1 A T2- G- - 1.4 3 mA D T T = 25 C Fig. 7 jWeEn Semiconductors BT131-600 4Q Triac Symbol Parameter Conditions Min Typ Max Unit V = 12 V I = 0.1 A T2- G+ - 3.8 7 mA D T T = 25 C Fig. 7 j I holding current V = 12 V T = 25 C Fig. 9 - 1.3 5 mA H D j V on-state voltage I = 1.4 A T = 25 C Fig. 10 - 1.2 1 V T T j Dynamic characteristics dV /dt rate of rise of off-state V = 402 V T = 125 C (V = 10 20 - V/s D DM j DM voltage 67% of V ) exponential waveform DRM R = 1 k Fig. 12 GT1(ext) dV /dt rate of change of V = 400 V T = 125 C dI / 2 - - V/s com D j com commutating voltage dt = 0.5 A/ms I = 1 A gate open T circuit 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 T2 main terminal 2 T2 T1 G 2 G gate sym051 3 T1 main terminal 1 3 2 1 TO-92 (SOT54) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT131-600 TO-92 plastic single-ended leaded (through hole) package 3 leads SOT54 BT131-600 All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 4 October 2016 2 / 13

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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