Product Information

BST82,215

BST82,215 electronic component of Nexperia

Datasheet
100V 190mA 10O@150mA,5V 830mW null SOT-23 MOSFETs ROHS
A low voltage logic P-channel MOSFET transistor used to enable and disable power.
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3496 ea
Line Total: USD 0.35

80729 - Global Stock
Ships to you between
Wed. 08 May to Fri. 10 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
17460 - Global Stock


Ships to you between Thu. 02 May to Wed. 08 May

MOQ : 3000
Multiples : 3000

Stock Image

BST82,215
Nexperia

3000 : USD 0.094
6000 : USD 0.094
9000 : USD 0.094
12000 : USD 0.094
15000 : USD 0.094

2623 - Global Stock


Ships to you between
Thu. 09 May to Tue. 14 May

MOQ : 5
Multiples : 5

Stock Image

BST82,215
Nexperia

5 : USD 0.204
50 : USD 0.1637
150 : USD 0.1466
500 : USD 0.1239
3000 : USD 0.1145
6000 : USD 0.1088

80729 - Global Stock


Ships to you between Wed. 08 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

BST82,215
Nexperia

1 : USD 0.3496
10 : USD 0.2495
100 : USD 0.1484
1000 : USD 0.107
3000 : USD 0.1012
9000 : USD 0.0908
24000 : USD 0.0886
45000 : USD 0.0862

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

Nexperia's BST82,215 part is a dual NPN epitaxial silicon transistor designed for use in the Switching and Amplifier applications. It has a PNP complement and is housed in the TO-126 plastic package. The device offers high DC current gain, low saturation voltage, and requires low operating currents. It is provided with two independent current gain circuits, providing a high degree of temperature stability. This makes it an excellent choice for applications such as audio power amplifiers, power drivers, and linear amplifiers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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