Product Information

BSS123,215

BSS123,215 electronic component of Nexperia

Datasheet
N-Channel 100 V 150mA (Ta) 250mW (Ta) Surface Mount TO-236AB

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2725 ea
Line Total: USD 0.2725

110271 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4966 - Global Stock


Ships to you between
Thu. 11 Apr to Tue. 16 Apr

MOQ : 10
Multiples : 10

Stock Image

BSS123,215
Nexperia

10 : USD 0.0718
100 : USD 0.0583
300 : USD 0.0514
3000 : USD 0.045
6000 : USD 0.0408
9000 : USD 0.0389

104354 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

BSS123,215
Nexperia

1 : USD 0.2725
10 : USD 0.1863
100 : USD 0.077
1000 : USD 0.0517
3000 : USD 0.0414
9000 : USD 0.0357
24000 : USD 0.0333
45000 : USD 0.0322
99000 : USD 0.0311

10521 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 113
Multiples : 1

Stock Image

BSS123,215
Nexperia

113 : USD 0.0702
250 : USD 0.0677
500 : USD 0.0651
1000 : USD 0.0639

2039910 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

BSS123,215
Nexperia

3000 : USD 0.0361
9000 : USD 0.0354

203700 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

BSS123,215
Nexperia

3000 : USD 0.0354
51000 : USD 0.0346

72750 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 3000
Multiples : 3000

Stock Image

BSS123,215
Nexperia

3000 : USD 0.0574

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Package Case
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of Philips Semiconductors Product specification N-channel TrenchMOS transistor BSS123 Logic level FET FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Extremely fast switching V = 100 V DSS Logic level compatible Subminiature surface mounting I = 150 mA D package g R 6 (V = 10 V) DS(ON) GS s GENERAL DESCRIPTION PINNING SOT23 N-channel enhancement mode PIN DESCRIPTION field-effect transistor in a plastic envelope using trench 1 gate 3 technology. Top view 2 source Applications:- Relay driver 3 drain High-speed line driver Telephone ringer 1 2 The BSS123 is supplied in the SOT23 subminiature surface mounting package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V Drain-source voltage T = 25 C to 150C - 100 V DSS j V Drain-gate voltage T = 25 C to 150C R = 20 k - 100 V DGR j GS V Gate-source voltage - 20 V GS I Continuous drain current T = 25 C - 150 mA D a I Pulsed drain current T = 25 C - 600 mA DM a P Total power dissipation T = 25 C - 0.25 W D a T, T Operating junction and - 55 150 C j stg storage temperature THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT R Thermal resistance junction surface mounted on FR4 board 500 - K/W th j-a to ambient August 2000 1 Rev 1.000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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