BFS17A,215

DISCRETE SEMICONDUCTORS DATA SHEET BFS17A NPN 3 GHz wideband transistor Product specification September1995NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. handbook, halfpage 3 APPLICATIONS It is intended for RF applications such as oscillators in TV tuners. 12 Top view MSB003 PINNING PIN DESCRIPTION Marking code: E2p. 1base 2 emitter Fig.1 SOT23. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO I DC collector current 25 mA C P total power dissipation up to T =70 C note 1 300 mW tot s f transition frequency I =25mA V = 5 V f = 500 MHz 2.8 GHz T C CE T =25 C amb G maximum unilateral power gain I =14mA V =10V f=800MHz 13.5 dB UM C CE F noise figure I =2mA V = 5 V f = 800 MHz 2.5 dB C CE T =25 C amb V output voltage d = 60 dB I =14mA V =10V 150 mV O im C CE R =75 T =25 C L amb f =793.25MHz (p+qr) LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2.5 V EBO I DC collector current 25 mA C I peak collector current 50 mA CM P total power dissipation up to T =70 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature 150 C j Note to the Quick reference data and the Limiting values 1. T is the temperature at the soldering point of the collector pin. s September1995 2