Product Information

BC856BMBYL

BC856BMBYL electronic component of Nexperia

Datasheet
Bipolar Transistors - BJT BC856BMB/XQFN3/REEL 7" Q1/T1 *

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2848 ea
Line Total: USD 0.28

32122 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
17648 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

BC856BMBYL
Nexperia

1 : USD 0.2335
10 : USD 0.161
100 : USD 0.0655
1000 : USD 0.0403
2500 : USD 0.0379
10000 : USD 0.0345
20000 : USD 0.0287
50000 : USD 0.0276
100000 : USD 0.0265

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Dc Current Gain Hfe Max
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BC856BMB 60 V, 100 mA PNP general-purpose transistor 19 August 2015 Product data sheet 1. General description PNP general-purpose transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: BC846BMB. 2. Features and benefits Leadless ultra small SMD plastic package Low package height of 0.37 mm Power dissipation comparable to SOT23 AEC-Q101 qualified 3. Applications General-purpose switching and amplification Mobile applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-emitter open base - - -60 V CEO voltage I collector current - - -100 mA C h DC current gain V = -5 V I = -2 mA T = 25 C 220 - 475 FE CE C amb 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 B base 1 3 2 E emitter 2 1 3 C collector Transparent top view 2 sym013 DFN1006B-3 (SOT883B)Nexperia BC856BMB 60 V, 100 mA PNP general-purpose transistor 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BC856BMB DFN1006B-3 DFN1006B-3: leadless ultra small plastic package 3 SOT883B solder lands body 1.0 x 0.6 x 0.37 mm 7. Marking Table 4. Marking codes Type number Marking code BC856BMB 0101 1010 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig. 1. DFN1006B-3 (SOT883B) binary marking code description BC856BMB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 August 2015 2 / 12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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