Product Information

BAS416F

BAS416F electronic component of Nexperia

Datasheet
Diodes - General Purpose, Power, Switching DIODE-GP POWER SWITCHING

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

228: USD 0.0392 ea
Line Total: USD 8.94

242483 - Global Stock
Ships to you between
Tue. 30 Apr to Mon. 06 May
MOQ: 228  Multiples: 1
Pack Size: 1
Availability Price Quantity
9700 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

BAS416F
Nexperia

1 : USD 0.0627
10 : USD 0.0566
100 : USD 0.04
1000 : USD 0.0306
2500 : USD 0.03
10000 : USD 0.03
20000 : USD 0.03

6333 - Global Stock


Ships to you between Mon. 06 May to Wed. 08 May

MOQ : 1
Multiples : 1

Stock Image

BAS416F
Nexperia

1 : USD 0.3209
10 : USD 0.2162
100 : USD 0.0908
1000 : USD 0.0552
2500 : USD 0.0506
10000 : USD 0.0403
20000 : USD 0.0379
50000 : USD 0.0368
100000 : USD 0.0345

9700 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 241
Multiples : 1

Stock Image

BAS416F
Nexperia

241 : USD 0.04
1000 : USD 0.0306
2500 : USD 0.03

242483 - Global Stock


Ships to you between Tue. 30 Apr to Mon. 06 May

MOQ : 228
Multiples : 1

Stock Image

BAS416F
Nexperia

228 : USD 0.0392
1000 : USD 0.0286
2500 : USD 0.028

     
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RoHS - XON
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BAS416 Low-leakage diode 2 October 2020 Product data sheet 1. General description Epitaxial, medium-speed switching diode with a low leakage current encapsulated in a small SOD323 SMD plastic package. 2. Features and benefits Plastic SMD package Low leakage current: typ. 3 pA Switching time: typ. 0.8 us Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. AEC-Q101 qualified 3. Applications Low-leakage current applications in surface mounted circuits. 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit I forward current T = 25 C - - 200 mA F j V repetitive peak reverse - - 85 V RRM voltage V forward voltage I = 50 mA T = 25 C - - 1.1 V F F j I reverse current V = 75 V pulsed T = 25 C - 0.003 5 nA R R j t reverse recovery time I = 10 mA I = 10 mA R = 100 - 0.8 3 s rr F R L I = 1 mA T = 25 C R(meas) j 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 1 2 K A 2 A anode aaa-032142 SOD323Nexperia BAS416 Low-leakage diode 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BAS416 SOD323 plastic, surface-mounted package 2 leads 1.3 mm pitch 1.7 SOD323 mm x 1.25 mm x 0.95 mm body 7. Marking Table 4. Marking codes Type number Marking code D4 BAS416 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse T = 25 C - 85 V RRM j voltage V reverse voltage - 75 V R I forward current - 200 mA F I non-repetitive peak t = 1 s square wave T = 25 C - 4 A FSM p j(init) forward current t = 1 ms square wave T = 25 C - 1 A p j(init) t = 1 s square wave T = 25 C - 0.5 A p j(init) I repetitive peak forward - 500 mA FRM current P total power dissipation T 25 C 1 - 250 mW tot amb T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. BAS416 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2020. All rights reserved Product data sheet 2 October 2020 2 / 10

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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