Product Information

NTE6407

NTE6407 electronic component of NTE

Datasheet
Diac; Ifmax:2A; DO35; 24÷32V

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 2.2275 ea
Line Total: USD 22.275

9 - Global Stock
Ships to you between
Fri. 05 Apr to Thu. 11 Apr
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
9 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 10
Multiples : 1
10 : USD 2.2275
25 : USD 2.025
250 : USD 1.6125
500 : USD 1.5125
1000 : USD 1.475
2500 : USD 1.4125
5000 : USD 1.375
7500 : USD 1.35

43 - Global Stock


Ships to you between Fri. 05 Apr to Thu. 11 Apr

MOQ : 1
Multiples : 1
1 : USD 1.976
3 : USD 1.755
11 : USD 1.521
30 : USD 1.443

     
Manufacturer
Product Category
Brand
Breakover Voltage Vbo Min
Breakover Voltage Vbo Max
Breakover Current Max.
Diac / Sidac Case Style
No. Of Pins
Thyristor Case
Kind Of Package
LoadingGif

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NTE6407, NTE6408, NTE6411, NTE6412 Bilateral Trigger Diodes (DIACS) Description: The NTE6407 thru NTE6412 are bilateral trigger DIACs offering a range of voltage characteristics from 28V to 63V. These devices are triggered from a blockingtoconduction state for either polarity of applied voltage whenever the amplitude of applied voltage exceeds the breakover voltage rating of the DIAC. Features: GlassChip Passivation DO35 Type Trigger Package Wide Voltage Range Selection Absolute Maximum Ratings: Maximum Trigger Firing Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1 F Device Dissipation (T = 40 to +40C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW A D Derate Above +40C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.6mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C j Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 to +125C stg Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 278C/W thJA Thermal Resistance, JunctiontoLead (Note 1), R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100C/W thJL Lead Temperature (During Soldering, 1/16 (1.59mm) from case, 10sec max), T . . . . . . . . +230C L Note 1. Based on maximum lead temperature of +85C at 250mW. Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Breakover Voltage (Forward and Reverse) NTE6407 V 24 28 32 V BO NTE6408 28 32 36 V NTE6411 35 40 45 V NTE6412 56 63 70 V Breakover Voltage Symmetry NTE6407, NTE6408 V Note 2 2 V BO NTE6411 3 V NTE6412 4 V Note 2. V = +V V . BO BO BOElectrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit Dynamic Breakback Voltage NTE6407, NTE6408 V V , at 10mA, Note 3 7 V BB NTE6411 V , Note 3 10 V NTE6412 20 V Peak Breakover Current I At Breakover Voltage 25 A BO Peak Pulse Current NTE6407, NTE6408, NTE6411 I For 10 s, 120PPs, T +40C 2.0 A TRM A NTE6412 1.5 A Note 3. Typical switching time is 900ns measured at I . PK 1.100 (27.9) .210 (5.33) Max .030 (.726) .107 (2.73)

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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