10 100004 0056

/ANSL 1. MSF-VATHAUER/ANSL is a microelectronic process involving the fabrication of an array of transistors on an integrated circuit. 2. It uses high-volume lithographic patterning to form the desired patterns in a submicron-accurate manner. 3. It can create vertical trenches of various depths and widths which are filled with gate oxide. 4. The gate oxide is then coated with a dielectric layer and gate electrodes are formed through etching. 5. An insulator is formed around the gate electrodes and this helps reduce the power consumption of the transistors. 6. The trenches formed can also be filled with a dielectric material to form an isolation structure between transistors. 7. The MSF-VATHAUER/ANSL process is highly accurate and provides very low power consumption in CMOS logic systems. 8. It also enables the implementation of multiple levels of metal structures, which helps in the fabrication of high-performance electronic systems. 9. The process is also used in the fabrication of memory devices, radio frequency (RF) components and special purpose integrated circuits. 10. The MSF-VATHAUER/ANSL process is beneficial in terms of low power consumption and high accuracy and therefore it is well suited for high performance and high density devices.