ARF465AG

ARF465A(G) ARF465B(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish TO-247 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 300V 150W 60MHz The ARF465A and 465B comprise a symmetric pair of common source RF power transistors designed for push-pull scienti c, commercial, medical and industrial RF power ampli er applications up to 60 MHz. Speci ed 300 Volt, 40.68 MHz Characteristics: Low Cost Common Source RF Package. Output Power = 150 Watts. Low Vth thermal coef cient. Gain = 13dB (Class C) Low Thermal Resistance. Ef ciency = 75% Optimized SOA for Superior Ruggedness. MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter ARF465A/B(G) UNIT V Drain-Source Voltage 1200 DSS Volts V Drain-Gate Voltage 1200 DGO I 6 Amps Continuous Drain Current T = 25C D C V Gate-Source Voltage 30 Volts GS P Watts 250 Total Power Dissipation T = 25C D C R Junction to Case 0.50 C/W JC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 A) 1200 DSS GS D Volts 1 V (ON) On State Drain Voltage (I (ON) = 3A, V = 10V) 8 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 25V, I = 3A) 3 4 mhos fs DS D V (TH) Gate Threshold Voltage (V = V , I = 50mA) 3 5 Volts GS DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS ARF465A/B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1200 1500 iss V = 0V GS C Output Capacitance 80 100 pF V = 200V oss DS f = 1 MHz C Reverse Transfer Capacitance 30 50 rss t Turn-on Delay Time 7 15 d(on) V = 15V GS t Rise Time V = 0.5V 5 10 r DD ns I = I 25C t Turn-off Delay Time 21 34 D D Cont. d(off) R = 1.6W t Fall Time G 12 25 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Ampli er Power Gain f = 40.68 MHz 13 15 dB PS V = 0V V = 300V 70 75 Drain Ef ciency GS DD % P = 150W out Electrical Ruggedness VSWR 6:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% Microsemi Reserves the right to change, without notice, the speci cations and information contained herein. 10,000 25 Class C 5000 V = 300V DD 20 P = 150W out C iss 1000 15 500 10 C oss 100 50 5 C rss 10 0 10 20 30 40 50 60 70 80 90 100 0.1 1 10 100 300 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 10 24 OPERATION HERE V > I (ON) x R (ON)MAX. DS D DS LIMITED BY R (ON) DS 250 SEC. PULSE TEST <0.5 % DUTY CYCLE 10 8 5 100uS 6 1mS 1 4 T = -55C J .5 T = +25C 10mS J 2 T =+25C T = +125C C J DC T =+150C J SINGLE PULSE 0 .1 0 1 2 3 4 5 6 7 1 10 100 1200 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4921 Rev B 1-2013 I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D