ARF448BG

D ARF448A(G) G ARF448B(G) S TO-247 Common Source RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 140W 65MHz The ARF448A and ARF448B comprise a symmetric pair of common source RF power transistors designed for push- pull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. Low Cost Common Source RF Package. Specified 150 Volt, 40.68 MHz Characteristics: Very High Breakdown for Improved Ruggedness. Output Power = 140 Watts. Low Thermal Resistance. Gain = 15dB (Class C) Nitride Passivated Die for Improved Reliability. Efficiency = 75% MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter ARF448A/448B(G) UNIT V Drain-Source Voltage 450 DSS Volts V Drain-Gate Voltage 450 DGO I Continuous Drain Current @ T = 25C 15 Amps D C V Gate-Source Voltage 30 Volts GS P Total Power Dissipation @ T = 25C 230 Watts D C R Junction to Case 0.55 C/W qJC T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063" from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250 mA) 450 DSS GS D Volts 1 V (ON) On State Drain Voltage (I (ON) = 7.5A, V = 10V) 3 DS D GS Zero Gate Voltage Drain Current (V = V , V = 0V) 25 DS DSS GS I mA DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 250 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) 100 nA GSS GS DS g Forward Transconductance (V = 25V, I = 7.5A) 5 8.5 mhos fs DS D V (TH) Gate Threshold Voltage (V = V , I = 50mA) 25 Volts GS DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS ARF448A/448B(G) Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 1400 1700 iss V = 0V GS C Output Capacitance V = 150V 150 200 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 65 100 rss t Turn-on Delay Time 715 d(on) V = 15V GS t Rise Time V = 0.5 V 510 r DD DSS ns I = I @ 25C t Turn-off Delay Time D D[Cont.] 23 40 d(off) R = 1.6W t G Fall Time 12 25 f FUNCTIONAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT G Common Source Amplifier Power Gain f = 40.68 MHz 13 15 dB PS V = 0V V = 150V h Drain Efficiency GS DD 70 75 % P = 140W out y Electrical Ruggedness VSWR 20:1 No Degradation in Output Power 1 Pulse Test: Pulse width < 380 mS, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 3000 Class C C iss V = 150V DD 25 P = 250W out 1000 20 500 C oss 15 C rss 10 100 5 50 0 10 20 30 40 50 60 65 1 5 10 50 150 FREQUENCY (MHz) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 1, Typical Gain vs Frequency Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 25 70 10mS T = -55C J 100mS OPERATION HERE LIMITED BY R (ON) DS 20 V > I (ON) x R (ON)MAX. DS D DS 250mSEC. PULSE TEST @ <0.5 % DUTY CYCLE 10 1mS 15 5 10mS 10 1 100mS .5 DC 5 T =+25C C T = +125C T = -55C J J T =+150C J SINGLE PULSE T = +25C J 0 .1 0 2 468 1 5 10 50 100 500 V , GATE-TO-SOURCE VOLTAGE (VOLTS) V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) GS DS Figure 3, Typical Transfer Characteristics Figure 4, Typical Maximum Safe Operating Area 050-4908 Rev B I , DRAIN CURRENT (AMPERES) GAIN (dB) D I , DRAIN CURRENT (AMPERES) CAPACITANCE (pf) D