Product Information

MT9JBF25672AKZ-1G4K2

MT9JBF25672AKZ-1G4K2 electronic component of Micron

Datasheet
DRAM Module DDR3 SDRAM 2Gbyte 244ULP Mini-UDIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 45.8291 ea
Line Total: USD 45.8291

56 - Global Stock
Ships to you between
Tue. 26 Mar to Mon. 01 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
56 - Global Stock


Ships to you between Tue. 26 Mar to Mon. 01 Apr

MOQ : 1
Multiples : 1
1 : USD 45.8291

56 - Global Stock


Ships to you between Tue. 26 Mar to Mon. 01 Apr

MOQ : 1
Multiples : 1
1 : USD 46.7644

     
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2GB (x72, ECC, SR) 244-Pin DDR3 SDRAM ULP Mini-UDIMM Features DDR3 SDRAM ULP Mini-UDIMM MT9JBF25672AKZ 2GB Figure 1: 244-Pin ULP Mini-UDIMM Features Module height: 17.9mm (0.705in) DDR3 functionality and operations supported as defined in the component data sheet 244-pin, ultra-low profile, 17.9mm, mini-unbuffered dual in-line memory module (ULP Mini-UDIMM) Fast data transfer rates: PC3-12800, PC3-10600, PC3-8500, or PC3-6400 Options Marking 2GB (256 Meg x 72) Operating temperature V = 1.5V 0.075V DD Commercial (0C T +70C) None A V = 3.03.6V DDSPD 1 Industrial (40C T +85C) I A Supports ECC error detection and correction Package Nominal and dynamic on-die termination (ODT) for 244-pin halogen-free ULP Mini- Z data, strobe, and mask signals UDIMM Frequency/CAS latency Single-rank 2 1.25ns @ CL = 11 (DDR3-1600) -1G6 On-board I C temperature sensor with integrated 1.5ns @ CL = 9 (DDR3-1333) -1G4 serial presence-detect (SPD) EEPROM 1.87ns @ CL = 7 (DDR3-1066) -1G1 8 internal device banks Note: 1. Contact Micron for industrial temperature Fixed burst chop (BC) of 4 and burst length (BL) of 8 module offerings. via the mode register set (MRS) Selectable BC4 or BL8 on-the-fly (OTF) Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 11 CL = 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef83e0c154 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 jbf9c256x72akz.pdf - Rev. F 5/13 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB (x72, ECC, SR) 244-Pin DDR3 SDRAM ULP Mini-UDIMM Features Table 2: Addressing Parameter 2GB Refresh count 8K Row address 32K A[14:0] Device bank address 8 BA[2:0] Device configuration 2Gb (256 Meg x 8) Column address 1K A[9:0] Module rank address 1 S0# Table 3: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41J256M8, 2Gb DDR3 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT9JBF25672AK(I)Z-1G6__ 2GB 256 Meg x 72 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT9JBF25672AK(I)Z-1G4__ 2GB 256 Meg x 72 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT9JBF25672AK(I)Z-1G1__ 2GB 256 Meg x 72 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT9JBF25672AKZ-1G4K1. PDF: 09005aef83e0c154 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 jbf9c256x72akz.pdf - Rev. F 5/13 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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