Product Information

MT4HTF6464HZ-667H1

MT4HTF6464HZ-667H1 electronic component of Micron

Datasheet
DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 121.8394 ea
Line Total: USD 121.8394

341 - Global Stock
Ships to you between
Thu. 04 Apr to Wed. 10 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
341 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 121.8394
51 : USD 81.2306
101 : USD 69.6281
301 : USD 60.9262

60 - Global Stock


Ships to you between Thu. 04 Apr to Wed. 10 Apr

MOQ : 1
Multiples : 1
1 : USD 121.8394
51 : USD 81.2306
101 : USD 69.6281
301 : USD 60.9262

     
Manufacturer
Product Category
Access Time Max
Mounting
Operating Temp Range
Packaging
Operating Current
Pin Count
Operating Temperature Max
Operating Temperature Min
Number Of Elements
Device Core Size
Operating Temperature Classification
Maximum Clock Rate
Total Density
Module Type
Chip Density
Main Category
Sub-Category
Rad Hardened
Organization
Operating Supply Voltage Typ
Operating Supply Voltage Min
Operating Supply Voltage Max
Package Type
Deleted
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256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM Features DDR2 SDRAM SODIMM MT4HTF3264HZ 256MB MT4HTF6464HZ 512MB MT4HTF12864HZ 1GB Figure 1: 200-Pin SODIMM (MO-224 R/C C) Features Module height: 30mm (1.181in) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 256MB (32 Meg x 64), 512MB (64 Meg x 64), 1GB (128 Meg x 64) V = V = 1.8V DD DDQ V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL_18-compatible) Differential data strobe (DQS, DQS#) option Options Marking 4n-bit prefetch architecture Operating temperature Multiple internal device banks for concurrent opera- Commercial (0C T +70C) None tion A 1 Industrial (40C T +85C) I A Programmable CAS latency (CL) Package Posted CAS additive latency (AL) 200-pin DIMM (halogen-free) Z t WRITE latency = READ latency - 1 CK 2 Frequency/CL Programmable burst lengths (BL): 4 or 8 2.5ns @ CL = 5 (DDR2-800) -80E Adjustable data-output drive strength 2.5ns @ CL = 6 (DDR2-800) -800 3.0ns @ CL = 5 (DDR2-667) -667 64ms, 8192-cycle refresh On-die termination (ODT) Notes: 1. Contact Micron for industrial temperature module offerings. Halogen-free 2. CL = CAS (READ) latency. Serial presence detect (SPD) with EEPROM Gold edge contacts Single rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -80E PC2-6400 800 800 533 400 12.5 12.5 55 -800 PC2-6400 800 667 533 400 15 15 55 -667 PC2-5300 667 553 400 15 15 55 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.256MB, 512MB, 1GB (x64, SR) 200-Pin DDR2 SODIMM Features Table 2: Addressing Parameter 256MB 512MB 1GB Refresh count 8K 8K 8K Row address 8K A[12:0] 8K A[12:0] 16K A[13:0] Device bank address 4 BA[1:0] 8 BA[2:0] 8 BA[2:0] Device configuration 512Mb (32 Meg x 16) 1Gb (64 Meg x 16) 2Gb (128 Meg x16) Column address 1K A[9:0] 1K A[9:0] 1K A[9:0] Module rank address 1 S0# 1 S0# 1 S0# Table 3: Part Numbers and Timing Parameters 256MB 1 Base device: MT47H32M16, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF3264H(I)Z-80E__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF3264H(I)Z-800__ 256MB 32 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF3264H(I)Z-667__ 256MB 32 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 512MB 1 Base device: MT47H64M16, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF6464H(I)Z-80E__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF6464H(I)Z-800__ 512MB 64 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF6464H(I)Z-667__ 512MB 64 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H128M16, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT4HTF12864H(I)Z-80E__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT4HTF12864H(I)Z-800__ 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT4HTF12864H(I)Z-667__ 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT4HTF6464HZ-667M1. PDF: 09005aef83c05a5d Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf4c32_64_128x64hz.pdf - Rev. D 4/14 EN 2009 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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