Product Information

MT16KTF1G64AZ-1G9P1

MT16KTF1G64AZ-1G9P1 electronic component of Micron

Datasheet
8GB PC3-14900 DDR3-1866MHz non-ECC Unbuffered CL13 240-Pin DIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 108.4781
10 : USD 94.7686
25 : USD 94.0026
50 : USD 90.7399
100 : USD 88.9251
N/A

Obsolete
0 - Global Stock

MOQ : 100
Multiples : 1
100 : USD 200.7966
110 : USD 190.6364
210 : USD 185.1896
500 : USD 181.1045
1000 : USD 174.2961
5000 : USD 171.5727
10000 : USD 168.8493
N/A

Obsolete
0 - Global Stock

MOQ : 100
Multiples : 100
100 : USD 169.6396
200 : USD 167.9071
2000 : USD 167.895
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 141.1135
10 : USD 118.2881
25 : USD 117.9671
50 : USD 114.8395
100 : USD 102.8367
250 : USD 101.9667
500 : USD 97.959
N/A

Obsolete
0 - Global Stock

MOQ : 1
Multiples : 1
1 : USD 158.7538
N/A

Obsolete
     
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4GB, 8GB (x64, DR) 240-Pin 1.35V DDR3L UDIMM Features 1.35V DDR3L SDRAM UDIMM MT16KTF51264AZ 4GB MT16KTF1G64AZ 8GB Figure 1: 240-Pin UDIMM (MO-269 R/C-B) Features Module height: 30.0mm (1.181in) DDR3L functionality and operations supported as defined in the component data sheet 240-pin, unbuffered dual in-line memory module (UDIMM) Fast data transfer rates: PC3-14900, PC3-12800, or PC3-10600 Figure 2: 240-Pin UDIMM (MO-269 R/C-B1) 4GB (512 Meg x 64), 8GB (1 Gig x 64) V = V = 1.35V (1.2831.45V) Module Height: 30.0mm (1.181 in.) DD DDQ V = V = 1.5V (1.4251.575V) DD DDQ Backward-compatible to V = V = 1.5V 0.75V DD DDQ V = 3.03.6V DDSPD Reset pin for improved system stability Nominal and dynamic on-die termination (ODT) for Options Marking data, strobe, and mask signals Operating temperature Dual-rank Commercial (0C T +70C) None A Fixed burst chop (BC) of 4 and burst length (BL) of 8 Package via the mode register set (MRS) 240-pin DIMM (halogen-free) Z Adjustable data-output drive strength Frequency/CAS latency Serial presence-detect (SPD) EEPROM 1.07ns CL = 13 (DDR3-1866) -1G9 Gold edge contacts 1.25ns CL = 11 (DDR3-1600) -1G6 1.5ns CL = 9 (DDR3-1333) -1G4 Halogen-free Addresses are mirrored for second rank Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef8413b620 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf16c512 1gx64az.pdf Rev. K 9/15 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.4GB, 8GB (x64, DR) 240-Pin 1.35V DDR3L UDIMM Features Table 2: Addressing Parameter 4GB 8GB Refresh count 8K 8K Row address 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 Device configuration 2Gb (256 Meg x 8) 4Gb (512 Meg x 8) Column address 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM t t Module Module Memory Clock/ CL- RCD- RP 2 Part Number Density Configuration Bandwidth Data Rate (Clock Cycles) MT16KTF51264AZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF51264AZ-1G4 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 Table 4: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM t t Module Module Memory Clock/ CL- RCD- RP 2 Part Number Density Configuration Bandwidth Data Rate (Clock Cycles) MT16KTF1G64AZ-1G9 8GB 1 Gig x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT16KTF1G64AZ-1G6 8GB 1 Gig x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 Notes: 1. Data sheets for the base device parts can be found on Microns web site. 2. All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT16KTF1G64AZ-1G9P1. PDF: 09005aef8413b620 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf16c512 1gx64az.pdf Rev. K 9/15 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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