DB3-TP

NOT RECOMMENDED FOR NEW DESIGNS DB3/DC34 MCC omponents TM 20736 Marilla Street Chatsworth AND Micro Commercial Components DB4 % Features SILICON l The three layer, two terminal, axial lead, hermetically sealed diacs are designed specifically for triggering thyristors. BIDIRECTIONAL Suffix designates Lead Free Finish/Rohs Compliant (Note1) DIAC Compliant. See ordering information) Moisture Sensitivity: Level 1 l These diacs are intended for use in thyrisitors phase control , circuits for lamp dimming, universal motor speed control ,and DO-35G heat control. Type number is marked. Maximum Ratings o o l Operating Temperature: -40 C to +125 C o o l Storage Temperature: -40 C to +125 C o l Thermal Resistance Junction to Lead:167 C/W o l Thermal Resistance Junction to Ambient: 400 C/W o Electrical Characteristics 25 C Unless Otherwise Specified D Power dissipation on Printed P 150mW C o Circuit(l=10mm) T =65 C A A Repetitive Peak on-state Current B tp=10us, f=100HZ I TRM 2.0A DB3,DC34,DB4 D Breakover Voltage Min Typ Max DB3 28 32 36V DC34 V C=22nF(Note 3) BO 30 34 38V C DB4 35 40 45V Dynamic Breakover V 5V(Min.) VBO and VF at10mA Voltage(Note 2) Breakover Voltage +V Symmetry BO C=22nF(Note 3) DIMENSIONS DB3, DC34, DB4 3V - -V BO INCHES MM Output DIM MIN MAX MIN MAX NOTE V 5V o(min) A --- .150 --- 3.8 Voltage(Note 2) B --- .079 --- 2.00 C --- .020 --- .52 Breakover D 1.083 --- 27.50 --- I 100 A C=22nF BO(max) Current(Note 2) T Rise Time(Note 2) 1.5us r Leakage I V =0.5V 10 A B(max) B BO(max) Current(Note 2) Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I. 2. Electrical characteristics applicable in both forward and reverse directions. 3. Connected in parallel with the devices. www.mccsemi.com Revision: C 2012/06/20 1 of 3 MCC TM Typical Performance Characteristics Micro Commercial Components I =10m F VBO : Break-Over Voltage I I : Break-Over Current BO BO I B V : Dynamic Breakover Voltage 0.5V BO IB : Leakage Current at V =0.5*V B BO V V : Voltage at Current I =10mA F F V F V BO Diagram 1 : Test circuit Figure 1. Admissible Power Dissipation Curve 160 120 80 40 0 0 102030 405060708090 100110120130 o Ambient Tempeatature ( C) Figure 2. Relative Variation of VBO versus Figure 3. Repetitive Peak Pulse Current versus Junction Temperature Pulse Duration (maximum values) 1.08 100 1.07 1.06 10 1.05 1.04 1.03 1 1.02 1.01 1.00 0.1 1 10 100 25 50 75 100 125 tp ( s) Tj(C) www.mccsemi.com Revision: C 2012/06/20 2 of 3 V Tj / V Tj=25C BO BO Power Dissipation (mW) Repetitive peak pulse current (A)